Einar Sveinbjörnsson

2015

Hysteresis modeling in graphene field effect transistors

2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance

Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated using Sodium Enhanced Oxidation Technique

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

A comparative study of surface passivation on SiC BJTs with high current gain

Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

1200V 5.2 mohmcm2 4H-SiC BJTs with a high common-emitter current gain

Design and Fabrication of 4H-SiC RF MOSFETs

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

High Frequency 4H-SiC MOSFETs

High power-density 4H-SiC RF MOSFETs

Fabrication and characterization of field-plated buried-gate SiC MESFETs

High channel mobility 4H-SiC MOSFETs

High Power Density 4H-SiC RF MOSFETs

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Fabrication of high power-density SiC MOSFETs

Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC

Interfaces between 4H-SiC and thermally grown SiO2: Microstructure, nanochemistry, and near-interface traps

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

High field effect electron mobility in Si face 4H-SiC MOSFET

Analysis of the electrono traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

A comparison between SiO2/4H-SiC interface traps on (0001) and (11-20) faces

Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Electroluminescence from silicon p-n junctions prepared by wafer bonding

Electrical Properties of Gold-related Defect Complexes in Silicon