Einar Sveinbjörnsson
Showing 41 publications
Hysteresis modeling in graphene field effect transistors
Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs
A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen
Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC
1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance
Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors
Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs
Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs
Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation
A comparative study of surface passivation on SiC BJTs with high current gain
Design and Fabrication of 4H-SiC RF MOSFETs
1200V 5.2 mohmcm2 4H-SiC BJTs with a high common-emitter current gain
Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps
High power-density 4H-SiC RF MOSFETs
Fabrication and characterization of field-plated buried-gate SiC MESFETs
High Power Density 4H-SiC RF MOSFETs
High channel mobility 4H-SiC MOSFETs
Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures
High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material
Fabrication of high power-density SiC MOSFETs
Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC
High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment
A comparison between SiO2/4H-SiC interface traps on (0001) and (11-20) faces
High field effect electron mobility in Si face 4H-SiC MOSFET
Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots
Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots
Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots
Electroluminescence from silicon p-n junctions prepared by wafer bonding
Electrical Properties of Gold-related Defect Complexes in Silicon
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