High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
Journal article, 2005

Author

Gudjon Gudjonsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Halldor Olafsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Fredrik Allerstam

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Thomas Rödle

IEEE Electron Device Letters

Vol. 26 2 96-98

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/6/2017

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