Hendrikus Jos

Showing 33 publications

2016

RF Monte Carlo calculation of power amplifier efficiency as function of signal bandwidth

Hendrikus Jos
International Journal of Microwave and Wireless Technologies. Vol. 8 (2), p. 125-133
Journal article
2014

Efficient and Wideband Power Amplifiers for Wireless Infrastructure Applications

Christian Fager, Ulf Gustavsson, Christer Andersson et al
Gigahertz Symposium
Conference contribution
2014

Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory

MUSTAFA ÖZEN, M. Acar, M.P. Van Der Heijden et al
Digest of Papers - 2014 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2014; Tampa Bay, FL; United States; 1 June 2014 through 3 June 2014, p. 243-246
Paper in proceedings
2012

Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors

Hendrikus Jos
Journal of Applied Physics. Vol. 112 (9), p. article no. 094508-
Journal article
2012

Linearization Study of a Highly Efficient CMOS-GaN RF Pulse Width Modulation Based Transmitter

MUSTAFA ÖZEN, Christer Andersson, Thomas Eriksson et al
European Microwave Conference, p. 136-139
Paper in proceedings
2011

Varactor-Based Dynamic Load Modulation of RF PAs

Hossein Mashad Nemati, Björn Almgren, Christer Andersson et al
European Microwave Conference, Manchester, Workshop "RF PA Efficiency Enhancement Techniques"
Conference contribution
2011

High-Efficiency RF Pulsewidth Modulation of Class-E Power Amplifiers

MUSTAFA ÖZEN, Hendrikus Jos, Christer Andersson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 59 (11), p. 2931-2942
Magazine article
2010

High Efficiency Transmitter Using Varactor Based Dynamic Load Modulation

Christian Fager, Haiying Cao, Thomas Eriksson et al
IEEE International Microwave Workshop Series on “RF Front-ends for Software Defined and Cognitive Radio Solutions”, p. 37-40
Paper in proceedings
2010

Highly Efficient Dynamic Load Modulation Transmitter

Christian Fager, Hossein Mashad Nemati, Haiying Cao et al
Prog. GigaHertz 2010
Conference contribution
2009

Design of Varactor-Based Tunable Matching Networks for Dynamic Load Modulation of High Power Amplifiers

Hossein Mashad Nemati, Christian Fager, Ulf Gustavsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (5), p. 1110-1118
Journal article
2009

Evaluation of high efficiency PAs for use in supply- and load-modulation transmitters

Christian Fager, Hossein Mashad Nemati, Ulf Gustavsson et al
IEEE Topical Symposium on Power Amplifiers for Wireless Communications
Paper in proceedings
2008

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Mattias Sudow, Hossein Mashad Nemati, Mattias Thorsell et al
IEEE Electron Device Letters. Vol. 29 (7), p. 728-730
Journal article
2008

Practical realizations of high efficiency switched mode power amplifiers

Hossein Mashad Nemati, Christian Fager, Ulf Gustavsson et al
German Microwave Conference, GEMIC 2008; Hamburg University of Technology (TUHH)Hamburg-Harburg; Germany; 10 March 2008 through 12 March 2008
Conference contribution
2008

Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures

Hossein Mashad Nemati, Christian Fager, Ulf Gustavsson et al
IEEE MTT-S International Microwave Symposium Digest, p. 1505-1508
Paper in proceedings
2007

High Frequency 4H-SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Per-Åke Nilsson et al
Materials Science Forum. Vol. 556-557, p. 795-798
Paper in proceedings
2007

Design and Fabrication of 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Einar Sveinbjörnsson et al
IEEE Transactions on Electron Devices. Vol. 54 (12), p. 3138-3145
Journal article
2007

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Fredrik Allerstam, Halldor Olafsson, Gudjon Gudjonsson et al
Journal of Applied Physics. Vol. 101, p. 124502-
Journal article
2007

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

Einar Sveinbjörnsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 556-557, p. 487-492
Paper in proceedings
2007

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Semiconductor Science and Technology. Vol. 22 (4), p. 307-311
Journal article
2007

Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

Fredrik Allerstam, Gudjon Gudjonsson, Einar Sveinbjörnsson et al
Materials Science Forum. Vol. 556-557, p. 517-520
Paper in proceedings
2006

High channel mobility 4H-SiC MOSFETs

Einar Sveinbjörnsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 527-529, p. 961-966
Paper in proceedings
2006

High power-density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 527-529, p. 1277-1280
Paper in proceedings
2006

High Power Density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
IEEE Electron Device Letters. Vol. 27 (6), p. 469-471
Journal article
2006

A Load Modulated High Efficiency Power Amplifier

Fabien Lepine, Herbert Zirath, Hendrikus Jos
European Microwave Conference 2006 Manchester
Paper in proceedings
2005

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Einar Sveinbjörnsson, Halldor Olafsson, Gudjon Gudjonsson et al
Materials Science Forum. Vol. 483-485, p. 841-844
Journal article
2005

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
IEEE Electron Device Letters. Vol. 26 (2), p. 96-98
Journal article
2005

Fabrication of high power-density SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Proceedings of the GHz 2005 conference, Uppsala, Sweden
Conference contribution
2005

Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

Mariusz Rudzinski, Vincent Desmaris, Paul Van Hal et al
International Conference on Nitride Semiconductor ICNS-6
Paper in proceedings
2005

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Halldor Olafsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Electronics Letters. Vol. 41 (14), p. 825-826
Journal article
2005

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 483-485, p. 833-836
Journal article
2005

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Materials Science Forum. Vol. 483-485, p. 837-840
Journal article
2004

High field effect electron mobility in Si face 4H-SiC MOSFET

Halldor Olafsson, Gudjon Gudjonsson, Einar Sveinbjörnsson et al
Electronics Letters. Vol. 40, p. 508-510
Journal article

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