SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
Journal article, 2008

SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other efficiency enhancement techniques. For a SiC Schottky diode varactor with a 50- radius fabricated by using a graded doping profile, a breakdown voltage of 40 V, a tuning range of 5.6, and a series resistance of 0.9 were achieved. The results show the great potential of this type of varactors for the use in the dynamic load modulation of high power amplifiers.

Schottky diodes electric breakdown micromechanical devices power amplifiers semiconductor doping silicon compounds varactors wide band gap semiconductors

Author

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Hossein Mashad Nemati

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Ulf Gustavsson

Chalmers

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

J Hassan

Linköping University

Anne Henry

Linköping University

Erik Janzén

Linköping University

Hendrikus Jos

NXP Semiconductors

Chalmers

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 29 7 728-730

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/LED.2008.2000642

More information

Latest update

9/10/2018