SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
Journal article, 2008
SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other efficiency enhancement techniques. For a SiC Schottky diode varactor with a 50- radius fabricated by using a graded doping profile, a breakdown voltage of 40 V, a tuning range of 5.6, and a series resistance of 0.9 were achieved. The results show the great potential of this type of varactors for the use in the dynamic load modulation of high power amplifiers.
Schottky diodes electric breakdown micromechanical devices power amplifiers semiconductor doping silicon compounds varactors wide band gap semiconductors
Author
Mattias Sudow
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Hossein Mashad Nemati
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Ulf Gustavsson
Chalmers
Kristoffer Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
J Hassan
Linköping University
Anne Henry
Linköping University
Erik Janzén
Linköping University
Hendrikus Jos
Chalmers
NXP Semiconductors Netherlands
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 29 7 728-730Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1109/LED.2008.2000642