SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
Artikel i vetenskaplig tidskrift, 2008

SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other efficiency enhancement techniques. For a SiC Schottky diode varactor with a 50- radius fabricated by using a graded doping profile, a breakdown voltage of 40 V, a tuning range of 5.6, and a series resistance of 0.9 were achieved. The results show the great potential of this type of varactors for the use in the dynamic load modulation of high power amplifiers.

Schottky diodes electric breakdown micromechanical devices power amplifiers semiconductor doping silicon compounds varactors wide band gap semiconductors

Författare

Mattias Sudow

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Hossein Mashad Nemati

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ulf Gustavsson

Chalmers University of Technology

Kristoffer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

J Hassan

Linköpings universitet

Anne Henry

Linköpings universitet

Erik Janzén

Linköpings universitet

Hendrikus Jos

Chalmers University of Technology

NXP Semiconductors

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 29 728-730

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1109/LED.2008.2000642