Per-Åke Nilsson

Forskare vid Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Visar 86 publikationer

2017

Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 168-171
Paper i proceeding
2017

Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5171-5180
Artikel i vetenskaplig tidskrift
2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 164-167
Paper i proceeding
2017

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

M. A. McCulloch, Jan Grahn, S. J. Melhuish et al
Journal of Astronomical Telescopes, Instruments, and Systems. Vol. 3 (1)
Artikel i vetenskaplig tidskrift
2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al
IEEE MTT-S International Microwave Symposium Digest, p. 176-179
Paper i proceeding
2016

10 K Room Temperature LNA for SKA Band 1

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest. Vol. 2016 - August, p. Art no 7540344-
Paper i proceeding
2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper i proceeding
2015

Erratum: “On the effect of δ-doping in self-switching diodes” [Appl. Phys. Lett. 105, 093505 (2014)]

Andreas Westlund, I. Iñiguez-de-la-Torre, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 106, p. 199902-
Artikel i vetenskaplig tidskrift
2015

Suppression of Parasitic Substrate Modes in Multilayer Integrated Circuits

Klas Eriksson, Sten Gunnarsson, Per-Åke Nilsson et al
IEEE Transactions on Electromagnetic Compatibility. Vol. 57 (3), p. 591-594
Artikel i vetenskaplig tidskrift
2015

Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
IEEE Transactions on Electron Devices. Vol. 62 (2), p. 532-537
Artikel i vetenskaplig tidskrift
2015

Zero-Bias Self-Switching In65Ga35As channel Diodes for Terahertz Detection,

Andreas Westlund, Per-Åke Nilsson, P. Sangaré et al
IEEE International Conference on Indium Phosphide and Related Materials Conference Proceedings 2015. Vol. CSW 2015, p. 82-83
Paper i proceeding
2015

Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

Andreas Westlund, Per-Åke Nilsson, P. Sangaré et al
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 33 (2), p. 021207-
Artikel i vetenskaplig tidskrift
2015

Graphene self-switching diodes as zero-bias microwave detectors

Andreas Westlund, Michael Winters, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 106 (9), p. 093116-
Artikel i vetenskaplig tidskrift
2015

Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

A. Rodriguez-Fernandez, Ignacio Íñiguez-De-La-Torre, Ó García-Pérez et al
Journal of Physics: Conference Series. Vol. 647 (1)
Paper i proceeding
2015

Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process

Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al
Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-
Paper i proceeding
2015

SWI 1200/600 GHz highly integrated receiver front-ends

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. Vol. session S3.1.2
Paper i proceeding
2015

Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

Andreas Westlund, P. Sangare, G. Ducournau et al
Solid-State Electronics. Vol. 104 (Feb), p. 79-85
Artikel i vetenskaplig tidskrift
2015

Phonon black-body radiation limit for heat dissipation in electronics

Joel Schleeh, J. Mateos, Ignacio Íñiguez-De-La-Torre et al
Nature Materials. Vol. 14 (2), p. 187-192
Artikel i vetenskaplig tidskrift
2015

Errautm: "graphene self-switching diodes as zero-bias microwave detectors" (Applied Physics Letters (2015) 106 (093116)

Andreas Westlund, Michael Winters, I.G. IVanov et al
Applied Physics Letters. Vol. 106 (15)
Artikel i vetenskaplig tidskrift
2014

Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
Solid-State Electronics. Vol. 91, p. 74-77
Artikel i vetenskaplig tidskrift
2014

Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
ESA Workshop on Micro and Millimetre Wave Technology and Techniques, Estec, the Netherlands
Paper i proceeding
2014

A G-Band (140-220 GHz) planar stubbed branch-line balun in BCB technology

Sona Carpenter, Morteza Abbasi, Yogesh Karandikar et al
2013 3rd Asia-Pacific Microwave Conference, APMC 2013, Seoul, South Korea, 5-8 November 2013, p. 273-275
Paper i proceeding
2014

An InP MMIC process optimized for low noise at Cryo

Per-Åke Nilsson, Joel Schleeh, Niklas Wadefalk et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper i proceeding
2014

On the effect of delta-doping in self-switching diodes

Andreas Westlund, I. Iniguez-de-la-Torre, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 105 (9), p. Article Number: 093505 -
Artikel i vetenskaplig tidskrift
2014

Reliability Assessment of Mixers, Multipliers and Low Noise Amplifiers for Space Applications

Aik-Yean Tang, Peter Sobis, Niklas Wadefalk et al
GigaHertz Symposium
Paper i proceeding
2013

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

Giuseppe Moschetti, Morteza Abbasi, Per-Åke Nilsson et al
Solid-State Electronics. Vol. 79, p. 268-273
Artikel i vetenskaplig tidskrift
2013

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Andreas Westlund, P. Sangare, G. Ducournau et al
Applied Physics Letters. Vol. 103 (13)
Artikel i vetenskaplig tidskrift
2013

Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
2013 International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2013

Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
IEEE Transactions on Electron Devices. Vol. 60 (5), p. 1625-1631
Artikel i vetenskaplig tidskrift
2013

Influence of gate-channel distance in low-noise InP HEMTs

Per-Åke Nilsson, Helena Rodilla, Joel Schleeh et al
2013 International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2013

Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 871-877
Artikel i vetenskaplig tidskrift
2013

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind et al
Solid-State Electronics. Vol. 87, p. 85-89
Artikel i vetenskaplig tidskrift
2013

Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes

Andreas Westlund, Giuseppe Moschetti, Per-Åke Nilsson et al
2013 International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2013

Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
IEEE Transactions on Electron Devices. Vol. 60 (1), p. 206-212
Artikel i vetenskaplig tidskrift
2013

200 GHz communication system using unipolar InAs THz rectifiers

G. Ducournau, Andreas Westlund, P. Sangaré et al
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Paper i proceeding
2012

Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al
15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012, p. 373-376
Paper i proceeding
2012

Fabrication and DC characterization of InAs/AlSb self-switching diodes

Andreas Westlund, Giuseppe Moschetti, Huan Zhao Ternehäll et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 65-68
Paper i proceeding
2012

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest
Paper i proceeding
2012

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 57-60
Paper i proceeding
2012

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Joel Schleeh, Göran Alestig, John Halonen et al
IEEE Electron Device Letters. Vol. 33 (5), p. 664-666
Artikel i vetenskaplig tidskrift
2012

Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE Microwave and Wireless Components Letters. Vol. 22 (3), p. 144-146
Artikel i vetenskaplig tidskrift
2012

Planar InAs/AlSb HEMTs With Ion-Implanted Isolation

Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al
IEEE Electron Device Letters. Vol. 33 (4), p. 510-512
Artikel i vetenskaplig tidskrift
2012

Optimized InP HEMTs for low noise at cryogenic temperatures

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
24th International Conference on Indium Phosphide & Related Materials (IPRM), p. 241-244
Paper i proceeding
2011

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al
Solid-State Electronics. Vol. 64 (1), p. 47-53
Artikel i vetenskaplig tidskrift
2011

Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection

L.Q.Zhang, Y.Alimi, C.Balocco et al
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on (2-7 Oct. 2011), p. 1-2
Paper i proceeding
2011

Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Joel Schleeh, John Halonen, Bengt Nilsson et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011
Paper i proceeding
2011

Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures

Huan Zhao Ternehäll, Giuseppe Moschetti, Shu Min Wang et al
16th European MBE conference, France, p. 133-134
Paper i proceeding
2010

HIGH ROBUSTNESS GAN HEMT SUBJECT TO REVERSE BIAS STRESS

A. Stucco, A. Ronchi, A. Chini et al
Wocsdice 2010
Paper i proceeding
2010

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Hans Hjelmgren, Fredrik Allerstam, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 57 (3), p. 729-732
Artikel i vetenskaplig tidskrift
2010

Anisotropic transport properties in InAs/AlSb heterostructures

Giuseppe Moschetti, Huan Zhao Ternehäll, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 97 (24), p. 3-
Artikel i vetenskaplig tidskrift
2010

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

Giuseppe Moschetti, Per-Åke Nilsson, Ludovic Desplanque et al
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 321-324
Paper i proceeding
2009

InAs/AlSb HEMTs characterised at cryogenic temperatures

Per-Åke Nilsson, Giuseppe Moschetti, Niklas Wadefalk et al
WOCSDICE 2009
Paper i proceeding
2009

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

Per-Åke Nilsson, Mattias Sudow, Fredrik Allerstam et al
Materials Science Forum. Vol. 600-603, p. 1103-1106
Artikel i vetenskaplig tidskrift
2009

Thermal Study of the High-Frequency Noise in GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (1), p. 19-26
Artikel i vetenskaplig tidskrift
2009

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Giuseppe Moschetti, Per-Åke Nilsson, Niklas Wadefalk et al
2009 IEEE International Conference on Indium Phosphide & Related Materials, p. 323-5
Paper i proceeding
2009

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Gilles Dambrine, Sylvain Bollaert, Y. Roellens et al
2009 67th Annual Device Research Conference (DRC), p. 149-51
Paper i proceeding
2008

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
International Microwave Symposium Digest, 2008, Atlanta, p. 463-466
Paper i proceeding
2008

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20
Paper i proceeding
2008

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Mattias Sudow, Hossein Mashad Nemati, Mattias Thorsell et al
IEEE Electron Device Letters. Vol. 29 (7), p. 728-730
Artikel i vetenskaplig tidskrift
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al
GigaHertz Symposium 2008, p. 78-
Paper i proceeding
2008

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Mattias Sudow, Martin Fagerlind, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (8), p. 1827-1833
Artikel i vetenskaplig tidskrift
2008

GaN Device and MMIC development at Chalmers

Martin Fagerlind, Mattias Sudow, Kristoffer Andersson et al
Gigahertz Symposium 2008, Abstract book, p. 86-
Paper i proceeding
2008

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Mattias Sudow et al
IEEE Transactions on Electron Devices. Vol. 55 (8), p. 1875-1879
Artikel i vetenskaplig tidskrift
2008

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

Mattias Sudow, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (10), p. 2201-2206
Artikel i vetenskaplig tidskrift
2007

High Frequency 4H-SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Per-Åke Nilsson et al
Materials Science Forum. Vol. 556-557, p. 795-798
Paper i proceeding
2007

Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

Hans Hjelmgren, Kristoffer Andersson, Joakim Eriksson et al
Solid-State Electronics. Vol. 51 (8), p. 1144-1152
Artikel i vetenskaplig tidskrift
2007

Design and Fabrication of 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Einar Sveinbjörnsson et al
IEEE Transactions on Electron Devices. Vol. 54 (12), p. 3138-3145
Artikel i vetenskaplig tidskrift
2006

A highly linear double balanced Schottky diode S-band mixer

Mattias Sudow, Kristoffer Andersson, Per-Åke Nilsson et al
IEEE Microwave and Wireless Components Letters. Vol. 16 (6), p. 336 - 8
Artikel i vetenskaplig tidskrift
2006

High channel mobility 4H-SiC MOSFETs

Einar Sveinbjörnsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 527-529, p. 961-966
Paper i proceeding
2006

An SiC MESFET-based MMIC process

Mattias Sudow, Kristoffer Andersson, Niklas Billström et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 54 (12, Part 1), p. 4072-4078
Artikel i vetenskaplig tidskrift
2006

SiC MESFET with a Double Gate Recess

Per-Åke Nilsson, Niklas Rorsman, Mattias Sudow et al
Materials Science Forum. Vol. 527-529, p. 1227-1230
Paper i proceeding
2006

High power-density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 527-529, p. 1277-1280
Paper i proceeding
2006

High Power Density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
IEEE Electron Device Letters. Vol. 27 (6), p. 469-471
Artikel i vetenskaplig tidskrift
2006

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Kristoffer Andersson, Mattias Sudow, Per-Åke Nilsson et al
IEEE Electron Device Letters. Vol. 27 (7), p. 573-575
Artikel i vetenskaplig tidskrift
2005

DC and RF performance of MESFET mode 4H-SiC Static Induction transistor

Dimitar Milkov Dochev, Kristina Dynefors, Vincent Desmaris et al
GHz2005
Paper i proceeding
2005

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Einar Sveinbjörnsson, Halldor Olafsson, Gudjon Gudjonsson et al
Materials Science Forum. Vol. 483-485, p. 841-844
Artikel i vetenskaplig tidskrift
2005

The Chalmers microstrip SiC MMIC Process

Mattias Sudow, Kristoffer Andersson, Per-Åke Nilsson et al
Conference Proceedings Gighahertz 2005
Paper i proceeding
2005

Fabrication of high power-density SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Proceedings of the GHz 2005 conference, Uppsala, Sweden
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
IEEE Electron Device Letters. Vol. 26 (2), p. 96-98
Artikel i vetenskaplig tidskrift
2005

On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs

Iltcho Angelov, Vincent Desmaris, Kristina Dynefors et al
Proceedings of the GAAS05 conference
Paper i proceeding
2005

Planar Schottky Microwave Diodes on 4H-SiC

Mattias Sudow, Niklas Rorsman, Per-Åke Nilsson et al
Materials Science Forum. Vol. 483-485, p. 937-940
Paper i proceeding
2005

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 483-485, p. 833-836
Artikel i vetenskaplig tidskrift
2004

Planar SiC Schottky Diodes for MMIC Applications

Mattias Sudow, Niklas Rorsman, Per-Åke Nilsson et al
Conference Proceedings. 34th European Microwave Conference (IEEE Cat. No.04EX963). Vol. 1, p. 153-156
Artikel i vetenskaplig tidskrift
2004

High field effect electron mobility in Si face 4H-SiC MOSFET

Halldor Olafsson, Gudjon Gudjonsson, Einar Sveinbjörnsson et al
Electronics Letters. Vol. 40, p. 508-510
Artikel i vetenskaplig tidskrift
1993

Key Components for High Tc SQUID Magnetometers

Per-Åke Nilsson
Doktorsavhandling

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