A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer
Artikel i vetenskaplig tidskrift, 2008
A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated circuit technology has been designed, processed, and characterized. The design is based on a 4 times 100 mum AlGaN/GaN HEMT in a single-ended circuit topology. The mixer has an IF bandwidth of 2 GHz with a conversion loss (CL) of < 8 dB across the X-band with a minimum CL of 6.9 dB at 11 GHz. The large-signal performance is exemplified by IIP 3 levels of 22 and 30 dBm at local oscillator drive levels of 15 and 23 dBm, respectively. A minimum noise figure of 9 dB is achieved at 11.6 GHz.
III-V semiconductors MMIC mixers aluminium compounds gallium compounds high electron mobility transistors intermodulation distortion network topology semiconductor device noise wide band gap semiconductors
Författare
Mattias Sudow
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Kristoffer Andersson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Martin Fagerlind
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Mattias Thorsell
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Per-Åke Nilsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 56 10 2201-2206Ämneskategorier
Annan elektroteknik och elektronik
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