Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Artikel i vetenskaplig tidskrift, 2015

Design optimization of the InAs self-switching diode (SSD) intended for direct zero-bias THz detection is presented. The SSD, which consists of nanometer-sized channels in parallel, was described using an equivalent small-signal circuit. Expressions for voltage responsivity and noise equivalent power (NEP) were derived in terms of geometrical design parameters of the SSD, i.e. the channel length and the number of channels. Modeled design dependencies were confirmed by RF and DC measurements on InAs SSDs. In terms of NEP, an optimum number of channels were found with the detector driven by a 50 Omega source. With a matched source, the model predicted a responsivity of 1900 V/W and NEP of 7.7 pW/Hz(1/2) for a single-channel InAs SSD with 35 nm channel width. Monte Carlo device simulations supported observed design dependencies. The proposed small-signal model can be used to optimize SSDs of any material system for low-noise and high-frequency operation as zero-bias detectors. In large signal measurements, the responsivity of the InAs SSDs exhibited a 1 dB deviation from linear responsivity at an input power of -3 dBm from a 50 Omega source.

Self-switching diode

Millimeter-wave detectors

Detector

Small-signal modeling

Millimeter-wave

Terahertz

In As

Författare

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

P. Sangare

Lille I: Universite des Sciences et Technologies de Lille

G. Ducournau

Lille I: Universite des Sciences et Technologies de Lille

I. Iniguez-de-la-Torre

Universidad de Salamanca

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

C. Gaquiere

Lille I: Universite des Sciences et Technologies de Lille

L. Desplanque

Lille I: Universite des Sciences et Technologies de Lille

X. Wallart

Lille I: Universite des Sciences et Technologies de Lille

Jean François Millithaler

Lille I: Universite des Sciences et Technologies de Lille

T. Gonzalez

Universidad de Salamanca

J. Mateos

Universidad de Salamanca

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Solid-State Electronics

0038-1101 (ISSN)

Vol. 104 Feb 79-85

Ämneskategorier

Nanoteknik

DOI

10.1016/j.sse.2014.11.014