Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Journal article, 2015

Design optimization of the InAs self-switching diode (SSD) intended for direct zero-bias THz detection is presented. The SSD, which consists of nanometer-sized channels in parallel, was described using an equivalent small-signal circuit. Expressions for voltage responsivity and noise equivalent power (NEP) were derived in terms of geometrical design parameters of the SSD, i.e. the channel length and the number of channels. Modeled design dependencies were confirmed by RF and DC measurements on InAs SSDs. In terms of NEP, an optimum number of channels were found with the detector driven by a 50 Omega source. With a matched source, the model predicted a responsivity of 1900 V/W and NEP of 7.7 pW/Hz(1/2) for a single-channel InAs SSD with 35 nm channel width. Monte Carlo device simulations supported observed design dependencies. The proposed small-signal model can be used to optimize SSDs of any material system for low-noise and high-frequency operation as zero-bias detectors. In large signal measurements, the responsivity of the InAs SSDs exhibited a 1 dB deviation from linear responsivity at an input power of -3 dBm from a 50 Omega source.

Terahertz

In As

Self-switching diode

Millimeter-wave detectors

Small-signal modeling

Detector

Millimeter-wave

Author

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

P. Sangare

Lille 1 University of Science and Technology

G. Ducournau

Lille 1 University of Science and Technology

I. Iniguez-de-la-Torre

University of Salamanca

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

C. Gaquiere

Lille 1 University of Science and Technology

L. Desplanque

Lille 1 University of Science and Technology

X. Wallart

Lille 1 University of Science and Technology

Jean François Millithaler

Lille 1 University of Science and Technology

T. Gonzalez

University of Salamanca

J. Mateos

University of Salamanca

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Solid-State Electronics

0038-1101 (ISSN)

Vol. 104 Feb 79-85

Subject Categories

Nano Technology

DOI

10.1016/j.sse.2014.11.014

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9/3/2018 1