Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate
Artikel i vetenskaplig tidskrift, 2007

DC and small-signal electro-thermal simulations of a 4H-SiC microwave power MESFET on a high purity semi-insulating substrate are compared to measurements. The focus is on the electron transport, substrate traps, and thermal heating. The doping concentrations are described by measured SIMS profiles, and the material parameters are in accordance with published results. Although the simulated MESFET has a p-buffer and a high purity substrate, the simulations show that the density of shallow traps affects the device characteristics. The very good agreement between simulated and measured DC and small-signal characteristics indicates that the models for electron mobility, substrate traps, and heating are the most important to achieve good agreement with measured data.

Simulation

Microwave

Silicon Carbide

Field effect transistor

Författare

Hans Hjelmgren

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Joakim Eriksson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Sudow

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Solid-State Electronics

0038-1101 (ISSN)

Vol. 51 8 1144-1152

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1016/j.sse.2007.06.013

Mer information

Skapat

2017-10-08