Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate
Journal article, 2007

DC and small-signal electro-thermal simulations of a 4H-SiC microwave power MESFET on a high purity semi-insulating substrate are compared to measurements. The focus is on the electron transport, substrate traps, and thermal heating. The doping concentrations are described by measured SIMS profiles, and the material parameters are in accordance with published results. Although the simulated MESFET has a p-buffer and a high purity substrate, the simulations show that the density of shallow traps affects the device characteristics. The very good agreement between simulated and measured DC and small-signal characteristics indicates that the models for electron mobility, substrate traps, and heating are the most important to achieve good agreement with measured data.

Simulation

Microwave

Silicon Carbide

Field effect transistor

Author

Hans Hjelmgren

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Joakim Eriksson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2)

Solid-State Electronics

0038-1101 (ISSN)

Vol. 51 8 1144-1152

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/j.sse.2007.06.013

More information

Created

10/8/2017