On the effect of delta-doping in self-switching diodes
Artikel i vetenskaplig tidskrift, 2014

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design parameters. Monte Carlo simulations confirmed the modeled effect of varying carrier concentration and channel width. SSDs were fabricated in InAs heterostructures with different delta-doping levels. Radio frequency (RF) characterization at 50 GHz reproduced the modeled trends. By reducing the carrier concentration in InAs SSDs with 40 nm wide channels from 2.7 x 10(12) cm(-2) to 1.5 x 10(12) cm(-2) (-44%), the noise equivalent power (NEP) improved from 130 pW/Hz(1/2) to 87 pW/Hz(1/2) (-33%).

Författare

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

I. Iniguez-de-la-Torre

Universidad de Salamanca

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

T. Gonzalez

Universidad de Salamanca

J. Mateos

Universidad de Salamanca

P. Sangare

University of Lille

G. Ducournau

University of Lille

C. Gaquiere

University of Lille

L. Desplanque

University of Lille

X. Wallart

University of Lille

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 105 9 Article Number: 093505 - 093505

Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)

Europeiska kommissionen (FP7), 2010-01-01 -- 2013-01-31.

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1063/1.4894806