On the effect of delta-doping in self-switching diodes
Journal article, 2014
Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design parameters. Monte Carlo simulations confirmed the modeled effect of varying carrier concentration and channel width. SSDs were fabricated in InAs heterostructures with different delta-doping levels. Radio frequency (RF) characterization at 50 GHz reproduced the modeled trends. By reducing the carrier concentration in InAs SSDs with 40 nm wide channels from 2.7 x 10(12) cm(-2) to 1.5 x 10(12) cm(-2) (-44%), the noise equivalent power (NEP) improved from 130 pW/Hz(1/2) to 87 pW/Hz(1/2) (-33%).
Author
Andreas Westlund
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
I. Iniguez-de-la-Torre
University of Salamanca
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
T. Gonzalez
University of Salamanca
J. Mateos
University of Salamanca
P. Sangare
University of Lille
G. Ducournau
University of Lille
C. Gaquiere
University of Lille
L. Desplanque
University of Lille
X. Wallart
University of Lille
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 105 9 Article Number: 093505 - 093505Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)
European Commission (EC) (EC/FP7/243845), 2010-01-01 -- 2013-01-31.
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1063/1.4894806