Graphene self-switching diodes as zero-bias microwave detectors
Artikel i vetenskaplig tidskrift, 2015

Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz½ and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors.

microwave detectors

graphene

Författare

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Michael Winters

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 106 9 093116- 093116

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1063/1.4914356

Mer information

Skapat

2017-10-07