Graphene self-switching diodes as zero-bias microwave detectors
Artikel i vetenskaplig tidskrift, 2015

Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz½ and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors.

graphene

microwave detectors

Författare

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Michael Winters

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

I. G. Ivanov

Linköpings universitet

J. ul Hassan

Linköpings universitet

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Erik Janzen

Linköpings universitet

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 106 9 093116- 093116

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1063/1.4914356

Mer information

Senast uppdaterat

2020-01-24