Graphene self-switching diodes as zero-bias microwave detectors
Journal article, 2015

Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz½ and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors.

microwave detectors

graphene

Author

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Michael Winters

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 106 9 093116- 093116

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1063/1.4914356

More information

Created

10/7/2017