Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
Paper i proceeding, 2013
DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zero-bias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.
diode
self-switching
detector
SSD
THz
InAs
Författare
Andreas Westlund
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Giuseppe Moschetti
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Per-Åke Nilsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Jan Grahn
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
L. Desplanque
Université de Lille
X. Wallart
Université de Lille
2013 International Conference on Indium Phosphide and Related Materials
1092-8669 (ISSN)
978-1-4673-6131-6 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/ICIPRM.2013.6562599
ISBN
978-1-4673-6131-6