Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
Paper i proceeding, 2013

DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zero-bias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.

diode

self-switching

detector

SSD

THz

InAs

Författare

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

L. Desplanque

University of Lille

X. Wallart

University of Lille

2013 International Conference on Indium Phosphide and Related Materials

1092-8669 (ISSN)

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/ICIPRM.2013.6562599

ISBN

978-1-4673-6131-6

Mer information

Skapat

2017-10-07