Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
Paper in proceeding, 2013

DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zero-bias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.

diode

self-switching

detector

SSD

THz

InAs

Author

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

L. Desplanque

University of Lille

X. Wallart

University of Lille

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

10928669 (ISSN)


978-1-4673-6131-6 (ISBN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICIPRM.2013.6562599

ISBN

978-1-4673-6131-6

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1/3/2024 9