Giuseppe Moschetti
Visar 42 publikationer
A 300-µW Cryogenic HEMT LNA for Quantum Computing
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
Magnetic Influence on Cryogenic InP HEMT DC Characteristics
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
Cryogenic LNAs for SKA band 2 to 5
Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K
Cryogenic low-noise InP HEMTs: A source-drain distance study
RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
Fabrication and DC characterization of InAs/AlSb self-switching diodes
Source-drain scaling of ion-implanted InAs/AlSb HEMTs
Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs
Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate
Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures
Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
Anisotropic transport properties in InAs/AlSb heterostructures
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
DC and RF cryogenic behaviour of InAs/AlSb HEMTs
Sb-HEMT: Toward 100-mV Cryogenic Electronics
InAs/AlSb HEMTs characterised at cryogenic temperatures
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Narrow band gap III-V based-FET for ultra low power high frequency analog applications
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