Giuseppe Moschetti

Visar 37 publikationer

2017

Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5171-5180
Artikel i vetenskaplig tidskrift
2017

Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 168-171
Paper i proceeding
2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 164-167
Paper i proceeding
2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al
IEEE MTT-S International Microwave Symposium Digest, p. 176-179
Paper i proceeding
2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper i proceeding
2014

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Eric Lefebvre, Giuseppe Moschetti, Mikael Malmkvist et al
Semiconductor Science and Technology. Vol. 29 (3)
Artikel i vetenskaplig tidskrift
2014

RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures

A. Hallen, Giuseppe Moschetti
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. Vol. 332, p. 172-175
Artikel i vetenskaplig tidskrift
2013

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

Giuseppe Moschetti, Morteza Abbasi, Per-Åke Nilsson et al
Solid-State Electronics. Vol. 79, p. 268-273
Artikel i vetenskaplig tidskrift
2013

Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes

Andreas Westlund, Giuseppe Moschetti, Per-Åke Nilsson et al
2013 International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2013

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind et al
Solid-State Electronics. Vol. 87, p. 85-89
Artikel i vetenskaplig tidskrift
2012

Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al
15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012, p. 373-376
Paper i proceeding
2012

Fabrication and DC characterization of InAs/AlSb self-switching diodes

Andreas Westlund, Giuseppe Moschetti, Huan Zhao Ternehäll et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 65-68
Paper i proceeding
2012

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 57-60
Paper i proceeding
2012

Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, Helena Rodilla, T. Gonzalez et al
Semiconductor Science and Technology. Vol. 27 (6), p. Article Number: 065018-
Artikel i vetenskaplig tidskrift
2012

Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

Helena Rodilla, T. Gonzalez, Giuseppe Moschetti et al
Semiconductor Science and Technology. Vol. 27 (1), p. 015008-
Artikel i vetenskaplig tidskrift
2012

Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE Microwave and Wireless Components Letters. Vol. 22 (3), p. 144-146
Artikel i vetenskaplig tidskrift
2012

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J. L. Codron et al
Applied Physics Letters. Vol. 100 (26)
Artikel i vetenskaplig tidskrift
2012

Planar InAs/AlSb HEMTs With Ion-Implanted Isolation

Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al
IEEE Electron Device Letters. Vol. 33 (4), p. 510-512
Artikel i vetenskaplig tidskrift
2011

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al
Solid-State Electronics. Vol. 64 (1), p. 47-53
Artikel i vetenskaplig tidskrift
2011

Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

H. Rodilla, Beatriz G. Vasallo, J. Mateos et al
21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011, p. 184-187
Paper i proceeding
2011

Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection

L.Q.Zhang, Y.Alimi, C.Balocco et al
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on (2-7 Oct. 2011), p. 1-2
Paper i proceeding
2011

Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

Beatriz G. Vasallo, Helena Rodilla, T. Gonzalez et al
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February 2011 through 11 February
Paper i proceeding
2011

Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

H. Rodilla, T. Gonzalez, Giuseppe Moschetti et al
Semiconductor Science and Technology. Vol. 26 (2)
Artikel i vetenskaplig tidskrift
2011

Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures

Huan Zhao Ternehäll, Giuseppe Moschetti, Shu Min Wang et al
16th European MBE conference, France, p. 133-134
Paper i proceeding
2011

Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

Helena Rodilla, T. Gonzalez, J. Mateos et al
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February through 11 February
Paper i proceeding
2011

Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, H. Rodilla, T. Gonzalez et al
Acta Physica Polonica A. Vol. 119 (2), p. 222-224
Paper i proceeding
2010

Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

H. Rodilla, T. Gonzalez, Mikael Malmkvist et al
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 333-336
Paper i proceeding
2010

Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, H. Rodilla, T. Gonzalez et al
Journal of Applied Physics. Vol. 108 (9)
Artikel i vetenskaplig tidskrift
2010

Anisotropic transport properties in InAs/AlSb heterostructures

Giuseppe Moschetti, Huan Zhao Ternehäll, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 97 (24), p. 3-
Artikel i vetenskaplig tidskrift
2010

Sb-HEMT: Toward 100-mV Cryogenic Electronics

A. Noudeviwa, Y. Roelens, F. Danneville et al
IEEE Transactions on Electron Devices. Vol. 57 (8), p. 1903-1909
Artikel i vetenskaplig tidskrift
2010

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

Giuseppe Moschetti, Per-Åke Nilsson, Ludovic Desplanque et al
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 321-324
Paper i proceeding
2010

InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

Giuseppe Moschetti
Licentiatavhandling
2009

InAs/AlSb HEMTs characterised at cryogenic temperatures

Per-Åke Nilsson, Giuseppe Moschetti, Niklas Wadefalk et al
WOCSDICE 2009
Paper i proceeding
2009

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Giuseppe Moschetti, Per-Åke Nilsson, Niklas Wadefalk et al
2009 IEEE International Conference on Indium Phosphide & Related Materials, p. 323-5
Paper i proceeding
2009

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Giuseppe Moschetti
IEEE Indium Phosphide & Related Materials, 2009, p. 323 - 325
Paper i proceeding
2009

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Gilles Dambrine, Sylvain Bollaert, Y. Roellens et al
2009 67th Annual Device Research Conference (DRC), p. 149-51
Paper i proceeding

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