Giuseppe Moschetti
Visar 41 publikationer
2019
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
AIP Advances. Vol. 9 (8)
Artikel i vetenskaplig tidskrift
2019
Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al
IIS UTokyo SYMPOSIUM No.100
Paper i proceeding
2018
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869
Artikel i vetenskaplig tidskrift
2018
Magnetic Influence on Cryogenic InP HEMT DC Characteristics
Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
Paper i proceeding
2017
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5171-5180
Artikel i vetenskaplig tidskrift
2017
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 168-171
Paper i proceeding
2017
Cryogenic LNAs for SKA band 2 to 5
Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 164-167
Paper i proceeding
2017
Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K
Yulung Tang, Niklas Wadefalk, J. Kooi et al
IEEE MTT-S International Microwave Symposium Digest, p. 176-179
Paper i proceeding
2016
Cryogenic low-noise InP HEMTs: A source-drain distance study
Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper i proceeding
2014
Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation
Eric Lefebvre, Giuseppe Moschetti, Mikael Malmkvist et al
Semiconductor Science and Technology. Vol. 29 (3)
Artikel i vetenskaplig tidskrift
2014
RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures
A. Hallen, Giuseppe Moschetti
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. Vol. 332, p. 172-175
Artikel i vetenskaplig tidskrift
2013
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Giuseppe Moschetti, Morteza Abbasi, Per-Åke Nilsson et al
Solid-State Electronics. Vol. 79, p. 268-273
Artikel i vetenskaplig tidskrift
2013
Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
Andreas Westlund, Giuseppe Moschetti, Per-Åke Nilsson et al
2013 International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2013
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation
Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind et al
Solid-State Electronics. Vol. 87, p. 85-89
Artikel i vetenskaplig tidskrift
2012
Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al
15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012, p. 373-376
Paper i proceeding
2012
Fabrication and DC characterization of InAs/AlSb self-switching diodes
Andreas Westlund, Giuseppe Moschetti, Huan Zhao Ternehäll et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 65-68
Paper i proceeding
2012
Source-drain scaling of ion-implanted InAs/AlSb HEMTs
Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 57-60
Paper i proceeding
2012
Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
Beatriz G. Vasallo, Helena Rodilla, T. Gonzalez et al
Semiconductor Science and Technology. Vol. 27 (6), p. Article Number: 065018-
Artikel i vetenskaplig tidskrift
2012
Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs
Helena Rodilla, T. Gonzalez, Giuseppe Moschetti et al
Semiconductor Science and Technology. Vol. 27 (1), p. 015008-
Artikel i vetenskaplig tidskrift
2012
Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Giuseppe Moschetti
Doktorsavhandling
2012
Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE Microwave and Wireless Components Letters. Vol. 22 (3), p. 144-146
Artikel i vetenskaplig tidskrift
2012
AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
L. Desplanque, S. El Kazzi, J. L. Codron et al
Applied Physics Letters. Vol. 100 (26)
Artikel i vetenskaplig tidskrift
2012
Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al
IEEE Electron Device Letters. Vol. 33 (4), p. 510-512
Artikel i vetenskaplig tidskrift
2011
Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
H. Rodilla, Beatriz G. Vasallo, J. Mateos et al
21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011, p. 184-187
Paper i proceeding
2011
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al
Solid-State Electronics. Vol. 64 (1), p. 47-53
Artikel i vetenskaplig tidskrift
2011
Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
L.Q.Zhang, Y.Alimi, C.Balocco et al
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on (2-7 Oct. 2011), p. 1-2
Paper i proceeding
2011
Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
H. Rodilla, T. Gonzalez, Giuseppe Moschetti et al
Semiconductor Science and Technology. Vol. 26 (2)
Artikel i vetenskaplig tidskrift
2011
Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate
Beatriz G. Vasallo, Helena Rodilla, T. Gonzalez et al
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February 2011 through 11 February
Paper i proceeding
2011
Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures
Huan Zhao Ternehäll, Giuseppe Moschetti, Shu Min Wang et al
16th European MBE conference, France, p. 133-134
Paper i proceeding
2011
Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
Helena Rodilla, T. Gonzalez, J. Mateos et al
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February through 11 February
Paper i proceeding
2011
Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors
Beatriz G. Vasallo, H. Rodilla, T. Gonzalez et al
Acta Physica Polonica A. Vol. 119 (2), p. 222-224
Paper i proceeding
2010
Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
H. Rodilla, T. Gonzalez, Mikael Malmkvist et al
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 333-336
Paper i proceeding
2010
Anisotropic transport properties in InAs/AlSb heterostructures
Giuseppe Moschetti, Huan Zhao Ternehäll, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 97 (24), p. 3-
Artikel i vetenskaplig tidskrift
2010
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
Beatriz G. Vasallo, H. Rodilla, T. Gonzalez et al
Journal of Applied Physics. Vol. 108 (9)
Artikel i vetenskaplig tidskrift
2010
DC and RF cryogenic behaviour of InAs/AlSb HEMTs
Giuseppe Moschetti, Per-Åke Nilsson, Ludovic Desplanque et al
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 321-324
Paper i proceeding
2010
Sb-HEMT: Toward 100-mV Cryogenic Electronics
A. Noudeviwa, Y. Roelens, F. Danneville et al
IEEE Transactions on Electron Devices. Vol. 57 (8), p. 1903-1909
Artikel i vetenskaplig tidskrift
2009
InAs/AlSb HEMTs characterised at cryogenic temperatures
Per-Åke Nilsson, Giuseppe Moschetti, Niklas Wadefalk et al
WOCSDICE 2009
Paper i proceeding
2009
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Giuseppe Moschetti, Per-Åke Nilsson, Niklas Wadefalk et al
2009 IEEE International Conference on Indium Phosphide & Related Materials, p. 323-5
Paper i proceeding
2009
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Giuseppe Moschetti
IEEE Indium Phosphide & Related Materials, 2009, p. 323 - 325
Paper i proceeding
2009
Narrow band gap III-V based-FET for ultra low power high frequency analog applications
Gilles Dambrine, Sylvain Bollaert, Y. Roellens et al
2009 67th Annual Device Research Conference (DRC), p. 149-51
Paper i proceeding
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