AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
Artikel i vetenskaplig tidskrift, 2012

The influence of the growth conditions at the AlSb/GaAs interface on the electron mobility in AlSb/InAs heterostructures is investigated. We show that an excessive antimony flux during the initial stage of the AlSb buffer growth leads to a strong anisotropy of electron mobility in InAs between [110] and [1-10] crystallographic orientations. This anisotropy is attributed to the formation of trenches oriented along the [1-10] direction in the InAs channel. Transmission electron microscopy reveals that these trenches are directly related to twinning defects originating from the AlSb/GaAs interface.

hemt

layers

inas

semiconductor

Författare

L. Desplanque

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

S. El Kazzi

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

J. L. Codron

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Y. Wang

ENSICAEN Ecole Nationale Superieure d'Ingenieurs de Caen

P. Ruterana

ENSICAEN Ecole Nationale Superieure d'Ingenieurs de Caen

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

X. Wallart

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 100 26 262103

Ämneskategorier

Fysik

DOI

10.1063/1.4730958

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2017-10-07