Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
Artikel i vetenskaplig tidskrift, 2012

The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron mobility transistors. It has its origin in the pile-up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the gate-induced channel depletion and results in a drain current enhancement. Our results indicate that the generation of holes by impact ionization and their further recombination lead to fluctuations in the charge of the hole pile-up, which provoke an important increase in the drain current noise, even when the kink effect is hardly perceptible in the output characteristics.

alsb/inas

monte-carlo

hemts

Författare

Beatriz G. Vasallo

Helena Rodilla

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

T. Gonzalez

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

J. Mateos

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 27 Article Number: 065018-

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Fysik

DOI

10.1088/0268-1242/27/6/065018