Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
Journal article, 2012
alsb/inas
monte-carlo
hemts
Author
Beatriz G. Vasallo
Helena Rodilla
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
T. Gonzalez
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
J. Mateos
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 27 6 Article Number: 065018- 065018Areas of Advance
Information and Communication Technology
Subject Categories
Physical Sciences
DOI
10.1088/0268-1242/27/6/065018