Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
Journal article, 2012

The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron mobility transistors. It has its origin in the pile-up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the gate-induced channel depletion and results in a drain current enhancement. Our results indicate that the generation of holes by impact ionization and their further recombination lead to fluctuations in the charge of the hole pile-up, which provoke an important increase in the drain current noise, even when the kink effect is hardly perceptible in the output characteristics.

alsb/inas

monte-carlo

hemts

Author

Beatriz G. Vasallo

Helena Rodilla

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

T. Gonzalez

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

J. Mateos

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 27 6 Article Number: 065018-

Areas of Advance

Information and Communication Technology

Subject Categories

Physical Sciences

DOI

10.1088/0268-1242/27/6/065018

More information

Created

10/7/2017