Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
Artikel i vetenskaplig tidskrift, 2012

A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.

low-power

Cryogenic

low-noise amplifier (LNA)

InAs/AlSbHEMT

Författare

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Wadefalk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Morteza Abbasi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

L. Desplanque

Lille I: Universite des Sciences et Technologies de Lille

X. Wallart

Lille I: Universite des Sciences et Technologies de Lille

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 22 144-146

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/LMWC.2011.2182637

PubMed

25391539