Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
Paper i proceeding, 2011

In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like C gs , C gd , f t and f c . Problems arise when trying to reproduce the values of g d and C ds due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic g m and also f max . © 2011 IEEE.

device modeling

InAs/AlSb HEMTs

Monte Carlo simulations

Författare

Helena Rodilla

Universidad de Salamanca

T. Gonzalez

Universidad de Salamanca

J. Mateos

Universidad de Salamanca

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February through 11 February

5744234

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/SCED.2011.5744234

ISBN

978-142447863-7