Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
Artikel i vetenskaplig tidskrift, 2012

The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 x 10(15) cm(-2) in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an f(T)/f(max) ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.

ion implantation

MMIC

InAs/AlSb high-electron-mobility transistor

field-effect transistors

low

power

Författare

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

A. Hallen

Kungliga Tekniska Högskolan (KTH)

L. Desplanque

Lille I: Universite des Sciences et Technologies de Lille

X. Wallart

Lille I: Universite des Sciences et Technologies de Lille

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 33 4 510-512

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/led.2012.2185480