Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
Journal article, 2012
ion implantation
MMIC
InAs/AlSb high-electron-mobility transistor
field-effect transistors
low
power
Author
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
A. Hallen
Royal Institute of Technology (KTH)
L. Desplanque
Lille 1 University of Science and Technology
X. Wallart
Lille 1 University of Science and Technology
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 33 4 510-512 6163342Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/led.2012.2185480