Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
Artikel i vetenskaplig tidskrift, 2011

In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, n(s), have been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cutoff frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of n(s) shifts the maximum of the transconductance and intrinsic cutoff frequency to higher values of drain current and improves the agreement with the experimental results.

performance

low-noise

alsb/inas

electron-mobility transistors

Författare

H. Rodilla

Universidad de Salamanca

T. Gonzalez

Universidad de Salamanca

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

J. Mateos

Universidad de Salamanca

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 26 2

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1088/0268-1242/26/2/025004

Mer information

Senast uppdaterat

2018-09-03