True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Artikel i vetenskaplig tidskrift, 2013

In this paper, we report the room-temperature and cryogenic properties of true planar 110 nm InAs/AlSb HEMTs fabricated with Ar-ion isolation technology. Device isolation is generally improved and is in particular increased by four orders of magnitude at 6 K compared to 300 K. This results in improved drain current saturation, lower gate leakage current and 23% higher peak transconductance. The RF performance is significantly improved as well, with 47% higher f(T) (162 GHz) and 72% higher f(max) (155 GHz) at the low drain voltage of 0.1 V, compared to room temperature. The overall performance of the fabricated devices shows the suitability of ion implantation for the device isolation at cryogenic temperature. Furthermore, the excellent stability against oxidation and truly planar structure of these devices demonstrate great potential for highly integrated cryogenic millimeter-wave circuits in InAs/AlSb technology with ultra-low power consumption.

Cryogenic

alsb/inas hemts

Ion implantation

impact ionization

inas

Low-power

device

InAs/AlSb high electron mobility transistor (HEMT)

isolation

gaas

heterostructures

MMICs

low-voltage

ohmic contacts

conductance

field-effect transistors

Författare

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Morteza Abbasi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

A. Hallen

Kungliga Tekniska Högskolan (KTH)

L. Desplanque

University of Lille

X. Wallart

University of Lille

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Solid-State Electronics

0038-1101 (ISSN)

Vol. 79 268-273

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1016/j.sse.2012.06.013

Mer information

Senast uppdaterat

2018-02-26