Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
Paper i proceeding, 2011

In this work, the noise performance of an InAs/AlSb 225-nm isolated-gate HEMT has been studied by means of Monte Carlo (MC) simulations. Firstly, the experimental DC behavior and the intrinsic small signal equivalent circuit parameters have been adequately reproduced in order to validate the model. Then, the extrinsic T and max have been obtained and compared with experimental data, getting a good agreement for T but some discrepancies for max . Finally, the intrinsic and extrinsic noise characteristics of the InAs based HEMT have been simulated, showing an excellent noise performance (F min =0.3 dB@10 GHz), comparable to that obtained in InGaAs HEMTs with a much shorter gate length of 50 nm. © 2011 IEEE.

Monte Carlo simulations

InAs/AlSb HEMTs

noise

Författare

H. Rodilla

Universidad de Salamanca

Beatriz G. Vasallo

Universidad de Salamanca

J. Mateos

Universidad de Salamanca

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

T. Gonzalez

Universidad de Salamanca

21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011

184-187

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/ICNF.2011.5994295

ISBN

978-145770192-4