Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
Paper in proceeding, 2011

In this work, the noise performance of an InAs/AlSb 225-nm isolated-gate HEMT has been studied by means of Monte Carlo (MC) simulations. Firstly, the experimental DC behavior and the intrinsic small signal equivalent circuit parameters have been adequately reproduced in order to validate the model. Then, the extrinsic T and max have been obtained and compared with experimental data, getting a good agreement for T but some discrepancies for max . Finally, the intrinsic and extrinsic noise characteristics of the InAs based HEMT have been simulated, showing an excellent noise performance (F min =0.3 dB@10 GHz), comparable to that obtained in InGaAs HEMTs with a much shorter gate length of 50 nm. © 2011 IEEE.


Monte Carlo simulations



H. Rodilla

University of Salamanca

Beatriz G. Vasallo

University of Salamanca

J. Mateos

University of Salamanca

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

T. Gonzalez

University of Salamanca

21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011

978-145770192-4 (ISBN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering





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