DC and RF cryogenic behaviour of InAs/AlSb HEMTs
Paper i proceeding, 2010

DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower R on , lower g ds , a more distinct knee in the I ds (V ds ) characteristics, increased f T and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.

Författare

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ludovic Desplanque

University of Lille

Xavier Wallart

University of Lille

H. Rodilla

Universidad de Salamanca

J. Mateos

Universidad de Salamanca

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010

1092-8669 (ISSN)

321-324

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/ICIPRM.2010.5516313

ISBN

978-142445920-9

Mer information

Senast uppdaterat

2018-09-03