DC and RF cryogenic behaviour of InAs/AlSb HEMTs
Paper in proceeding, 2010
Author
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Ludovic Desplanque
University of Lille
Xavier Wallart
University of Lille
H. Rodilla
University of Salamanca
J. Mateos
University of Salamanca
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010
1092-8669 (ISSN)
321-324978-142445920-9 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ICIPRM.2010.5516313
ISBN
978-142445920-9