DC and RF cryogenic behaviour of InAs/AlSb HEMTs
Paper in proceedings, 2010

DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower R on , lower g ds , a more distinct knee in the I ds (V ds ) characteristics, increased f T and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.

Author

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Ludovic Desplanque

University of Lille

Xavier Wallart

University of Lille

H. Rodilla

University of Salamanca

J. Mateos

University of Salamanca

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010

1092-8669 (ISSN)

321-324

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICIPRM.2010.5516313

ISBN

978-142445920-9

More information

Latest update

9/3/2018 1