Anisotropic transport properties in InAs/AlSb heterostructures
Artikel i vetenskaplig tidskrift, 2010

We have investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a (001) InP substrate. An electrical analysis showed anisotropic sheet resistance Rsh and electron mobility μn in the two dimensional electron gas (2DEG). Hall measurements demonstrated an enhanced anisotropy in μn when cooled from room temperature to 2 K. High electron mobility transistors exhibited 27% higher maximum drain current IDS and 23% higher peak transconductance gm when oriented along the [1-10] direction. The anisotropic transport behavior in the 2DEG was correlated with an asymmetric dislocation pattern observed in the surface morphology and by cross-sectional microscopy analysis of the InAs/AlSb heterostructure.

Hall effect

aluminium compounds

semiconductor growth

III-V semiconductors

electric resistance

indium compounds

cooling

dislocations

surface morphology

two-dimensional electron gas

high electron mobility transistors

electron mobility

semiconductor heterojunctions

Författare

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Huan Zhao Ternehäll

Chalmers, Teknisk fysik, Fysikalisk elektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Alexei Kalaboukhov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

G. Dambrine

Universite des Sciences et Technologies de Lille

Chalmers University of Technology

S. Bollaert

Chalmers University of Technology

Universite des Sciences et Technologies de Lille

L. Desplanque

Universite des Sciences et Technologies de Lille

Chalmers University of Technology

X. Wallart

Chalmers University of Technology

Universite des Sciences et Technologies de Lille

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 97 3- 243510

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1063/1.3527971