Huan Zhao Ternehäll

Visar 76 publikationer

2017

Effect of nano-apertures pattern on InAs nanowires evolution process grown by selective area molecular beam epitaxy

Muhammad Asad, Ghada Badawy, Huan Zhao Ternehäll et al
44th International Symposium on Compound Semiconductors (ISCS), 2017 Compound Semiconductor Week (CSW2017), Berlin, Germany, May 14-18, 2017
Paper i proceeding
2016

THz Emission Studies on Semiconductor Alloy, InAsBi

A. J. Vickers, L F F Al-Ghuraibawi, A Boland-Thomas et al
International Workshop on Terahertz Science, Nanotechnologies and Applications
Paper i proceeding
2016

Fabrication of nanowire growth templates by forming pinholes in SiOx on Si

Huan Zhao Ternehäll, Elham Fadaly, Mahdad Sadeghi
The 43rd International Symposium on Compound Semiconductor
Paper i proceeding
2015

Heterogeneous Integration of Terahertz Diode Circuits

Aleksandra Malko, Huan Zhao Ternehäll, Vladimir Drakinskiy et al
2015 Asia-Pacific Microwave Conference. Vol. 1
Paper i proceeding
2015

Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

Jun Shao, Zhen Qi, Huan Zhao Ternehäll et al
Journal of Applied Physics. Vol. 118 (16), p. 165305-
Artikel i vetenskaplig tidskrift
2015

Production of nano-holes patten on Si(111) by colloidal lithography for growth of InAs nanowires

Elham Fadaly, Ines Massiot, Mahdad Sadeghi et al
15th International Conference on Nanotechnology
Paper i proceeding
2015

Effect of bismuth on structural and electrical properties of InAs films grown on GaAs substrates by MBE

Huan Zhao Ternehäll, Aleksandra Malko, Zonghe Lai
Journal of Crystal Growth. Vol. 425, p. 89-93
Artikel i vetenskaplig tidskrift
2015

Status and Progress of Schottky Technology Development for SWI and ISMAR

Vladimir Drakinskiy, Peter Sobis, Huan Zhao Ternehäll et al
26th International Symposium on Space Terahertz Technology, ISSTT 2015; Cambridge; United States; 16 March 2015 through 18 March 2015, p. P-6
Paper i proceeding
2015

SWI 1200/600 GHz highly integrated receiver front-ends

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. Vol. session S3.1.2
Paper i proceeding
2014

Effect of Buffer Quality on the Performance of InAs/AlSb Heterostructure Backward Tunneling Diode

Huan Zhao Ternehäll, Parisa Yadranjee Aghdam, Zonghe Lai
39th Int. Conf. on Infrared, Millimeter, and THz Waves, p. Art. no. 6956521-
Paper i proceeding
2014

Heterostructure integrated HBV-based frequency quintupler for 500 GHz

Aleksandra Malko, Tomas Bryllert, Josip Vukusic et al
38th Workshops on Compound Semiconductors Devices and Integrated Circuits, p. 11 - 12
Paper i proceeding
2014

Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
ESA Workshop on Micro and Millimetre Wave Technology and Techniques, Estec, the Netherlands
Paper i proceeding
2014

Molecular Spectroscopy With a Compact 557-GHz Heterodyne Receiver

Philipp Neumaier, Heiko Richter, Jan Stake et al
IEEE Transactions on Terahertz Science and Technology. Vol. 4 (4), p. 469-478
Artikel i vetenskaplig tidskrift
2014

Effect of buffer design on structural and electrical properties of InAs films grown on GaAs substrates

Huan Zhao Ternehäll, Shu Min Wang, Yuxin Song et al
the 41st international symposium on compound semiconductors, Montepillier, France
Paper i proceeding
2014

Effect of bismuth on InAs films grown on GaAs substrates by MBE

Huan Zhao Ternehäll, Aleksandra Malko, Zonghe Lai
18th International Conference on Molecular Beam Epitaxy, Flagstaff, Arizona
Paper i proceeding
2013

Terahertz GaAs Schottky diode mixer and multiplier MIC’s based on e-beam technology

Vladimir Drakinskiy, Peter Sobis, Huan Zhao Ternehäll et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2013

Sensitivity Analysis of TRL Calibration in Waveguide Integrated Membrane Circuits

Jörgen Stenarson, Thi Ngoc Do Thanh, Huan Zhao Ternehäll et al
IEEE Transactions on Terahertz Science and Technology. Vol. 3 (5), p. 558-565
Artikel i vetenskaplig tidskrift
2013

300 GHz to 1.2 THz GaAs Schottky membrane TMIC’s for next generation space missions

Peter Sobis, Vladimir Drakinskiy, Anders Emrich et al
24th International Symposium on Space Terahertz Technology
Paper i proceeding
2013

Wafer bondig for integrated III-V frequency multipliers on silicon

Aleksandra Malko, Tomas Bryllert, Josip Vukusic et al
Conference on Wafer Bonding for Microsystems 3D- and Wafer Level Integration, p. 75 - 76
Paper i proceeding
2013

Thermal Analysis of III-V HBV Diode Structures on InP, GaAs, Silicon and Diamond Substrates

Aleksandra Malko, Aik-Yean Tang, Tomas Bryllert et al
International Conference on Infrared, Millimeter, and Terahertz Waves, p. 1-2
Paper i proceeding
2013

Integrated diode technology for THz applications

Jan Stake, Huan Zhao Ternehäll, Vladimir Drakinskiy et al
SPIE Optics + Photonics, Terahertz Emitters, Receivers, and Applications IV. Vol. 8846
Paper i proceeding
2013

Novel Dilute Bismides for IR Optoelectronics Applications

Shu Min Wang, Yuxin Song, Kai Wang et al
Asia Communications and Photonics Conference, ACP
Paper i proceeding
2013

Optical properties of InGaAsBi/GaAs quantum wells and InAsBi layer on GaAs substrate

Y Gu, Y.G Zhang, Yuxin Song et al
4th International workshop on Bithmuth-Containing Semiconductors: Growth, Properties and Devices, Arkansas, USA, 2013
Paper i proceeding
2013

Molecular spectroscopy with a compact 557 GHz heterodyne receiver

Philipp Neumaier, Heiko Richter, Heinz-Wilhelm Hübers et al
38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Paper i proceeding
2013

Modeling of Sb-heterostructure backward diode for millimeter- and submillimeter-wave detection

Parisa Yadranjee Aghdam, Huan Zhao Ternehäll
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 10 (5), p. 777-781
Artikel i vetenskaplig tidskrift
2012

Modeling of Sb-Heterostructure Backward Diode for Millimeter- and Submillimeter- Wave Detection

Parisa Yadranjee Aghdam, Huan Zhao Ternehäll
39th International Symposium on Compound Semiconductors
Paper i proceeding
2012

Integrated terahertz electronics for imaging and sensing

Jan Stake, Tomas Bryllert, Robin Dahlbäck et al
19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012, Warsaw, 21-23 May 2012. Vol. 1, p. 122-123
Paper i proceeding
2012

Fabrication and DC characterization of InAs/AlSb self-switching diodes

Andreas Westlund, Giuseppe Moschetti, Huan Zhao Ternehäll et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 65-68
Paper i proceeding
2012

Modeling of Sb-Heterostructure Backward Diode for Millimeter- and Submillimeter-Wave Detection

Parisa Yadranjee Aghdam, Huan Zhao Ternehäll
Gigahertz symposium
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2012

Influence of waveguide width errors on TRL and LRL calibrations

Jörgen Stenarson, Klas Yhland, Thi Ngoc Do Thanh et al
79th Automatic RF Techniques Microwave Measurement Conference (ARFTG)
Paper i proceeding
2012

Patterned Substrate Epitaxy

Huan Zhao Ternehäll, Shu Min Wang
Lattice Engineering Technology and Applications, p. 396-
Kapitel i bok
2012

A 600 GHz Orthomode Transducer based on a Waveguide Integrated Wire Grid Polarizer

Arvid Hammar, Peter Sobis, Vladimir Drakinskiy et al
TWENTY-THIRD INTERNATIONAL SYMPOSIUM ON SPACE TERAHERTZ TECHNOLOGY (ISSTT2012)
Paper i proceeding
2012

Development of a 557 GHz GaAs monolithic membrane-diode mixer

Huan Zhao Ternehäll, Vladimir Drakinskiy, Peter Sobis et al
24th International Conference on Indium Phosphide and Related Materials, p. 102-105
Paper i proceeding
2011

Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection

L.Q.Zhang, Y.Alimi, C.Balocco et al
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on (2-7 Oct. 2011), p. 1-2
Paper i proceeding
2011

Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications

Huan Zhao Ternehäll, Thi Ngoc Do Thanh, Peter Sobis et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011, p. 1-4
Paper i proceeding
2011

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Physica Status Solidi (B): Basic Research. Vol. 248 (5), p. 1207-1211
Artikel i vetenskaplig tidskrift
2011

Submillimeter Wave S-Parameter Characterization of Integrated Membrane Circuits

Huan Zhao Ternehäll, Aik-Yean Tang, Peter Sobis et al
IEEE Microwave and Wireless Components Letters. Vol. 21 (2), p. 110-112
Artikel i vetenskaplig tidskrift
2011

Development of a Compact 557 GHz Heterodyne Receiver

Jan Stake, Huan Zhao Ternehäll, Peter Sobis et al
6th ESA Workshop on Millimetre-Wave Technology and Applications
Paper i proceeding
2011

Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures

Huan Zhao Ternehäll, Giuseppe Moschetti, Shu Min Wang et al
16th European MBE conference, France, p. 133-134
Paper i proceeding
2011

Contactless Electroreflectance, Photoluminescence and Time-Resolved Photoluminescence of GaInNAs Quantum Wells Obtained by the MBE Method with N-irradiation

M Baranowski, R Kudrawiec, M Syperek et al
Semiconductor Science and Technology. Vol. 26 (4), p. 045012-
Artikel i vetenskaplig tidskrift
2011

TERACOMP

Jan Stake, Huan Zhao Ternehäll, Axel Hülsmann et al
let´s embrace space, p. 405-409
Kapitel i bok
2010

Anisotropic transport properties in InAs/AlSb heterostructures

Giuseppe Moschetti, Huan Zhao Ternehäll, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 97 (24), p. 3-
Artikel i vetenskaplig tidskrift
2010

Analysis of the High Frequency Spreading Resistance for Surface Channel Planar Schottky Diodes

Aik-Yean Tang, Peter Sobis, Huan Zhao Ternehäll et al
35th International Conference on Infrared, Millimeter and Terahertz Waves (5-10 Sept. 2010), p. 1-2
Paper i proceeding
2010

1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
E-MRS Spring Meeting 2010, Strasbourg, France, June 7-10, 2010 (invited)
Paper i proceeding
2010

VNA-calibration and S-parameter characterization of submillimeter wave integrated membrane circuits

Huan Zhao Ternehäll, Aik-Yean Tang, Peter Sobis et al
21st International Symposium on Space Terahertz Technology 2010, ISSTT 2010; Oxford; United Kingdom; 23 March 2010 through 25 March 2010, p. 299-300
Paper i proceeding
2010

340 GHz GaAs monolithic membrane supported Schottky diode circuits

Huan Zhao Ternehäll, Aik-Yean Tang, Peter Sobis et al
GigaHertz Symposium 2010 (10), p. 68-
Paper i proceeding
2010

Characterization of GaAs membrane circuits for THz heterodyne receiver applications

Huan Zhao Ternehäll, Aik-Yean Tang, Peter Sobis et al
21st International Symposium on Space Terahertz Technology, Oxford, UK
Paper i proceeding
2010

Development of integrated submillimeter wave diodes for sources and detectors

Jan Stake, Tomas Bryllert, Peter Sobis et al
13th European Microwave Week 2010: Connecting the World, EuMIC 2010; Paris; France; 26 September 2010 through 1 October 2010, p. 226-229
Paper i proceeding
2010

VNA-Calibration and S-Parameter Characterization of Submillimeter Wave Integrated Membrane Circuits

Huan Zhao Ternehäll, Aik-Yean Tang, Peter Sobis et al
35th International Conference on Infrared Millimeter and Terahertz Waves
Paper i proceeding
2010

Parameter Extraction and Geometry Optimisation of Planar Schottky Diodes

Aik-Yean Tang, Peter Sobis, Vladimir Drakinskiy et al
21st International Symposium on Space Terahertz Technology 2010, ISSTT 2010; Oxford; United Kingdom; 23 March 2010 through 25 March 2010, p. 361-
Paper i proceeding
2009

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Journal of Crystal Growth. Vol. 311, p. 1863-1867
Artikel i vetenskaplig tidskrift
2009

Growth and Characterization of GaInNAs by Molecular Beam Epitaxy Using a Nitrogen Irradiation Method

Huan Zhao Ternehäll, Shu Min Wang, Qing Xiang Zhao et al
Journal of Crystal Growth. Vol. 311 (7), p. 1723-1727
Artikel i vetenskaplig tidskrift
2009

Schottky receivers and graphene for future THz electronics

Jan Stake, Omid Habibpour, Aik-Yean Tang et al
International Symposium on Terahertz Science and Technology between Japan and Sweden, p. 56-57
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2009

13 GHz Bandwidth of 1.31 μm GaInNAs Triple Quantum Well Lasers

Huan Zhao Ternehäll, Åsa Haglund, Shu Min Wang et al
The 15th European MBE Workshop, Zakopane, Poland
Paper i proceeding
2009

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Microelectronics Journal. Vol. 40, p. 386-391
Artikel i vetenskaplig tidskrift
2009

A 1.31 μm GaInNAs Triple Quantum Well Laser with 13 GHz Small Signal Modulation Bandwidth

Huan Zhao Ternehäll, Åsa Haglund, Petter Westbergh et al
Electronics Letters. Vol. 45, p. 356-357
Artikel i vetenskaplig tidskrift
2008

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Workshop on Recent Advances in Low Dimensional Structures and Devices (WRA-LDSD)
Paper i proceeding
2008

Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers

Huan Zhao Ternehäll, Göran Adolfsson, Shu Min Wang et al
Electronics Letters. Vol. 44 (7), p. 475-477
Artikel i vetenskaplig tidskrift
2008

High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6909, p. 690905-
Paper i proceeding
2008

Very Low Threshold Current Density 1.29 µm GaInNAs Triple Quantum Well Lasers Grown by MBE

Huan Zhao Ternehäll, Göran Adolfsson, Shu Min Wang et al
Electronics Letter. Vol. 44, p. 416-417
Artikel i vetenskaplig tidskrift
2008

Growth and Characterization of GaInNAs Quantum Wells Using Nitrogen Irradiation in Molecular Beam Epitaxy

Huan Zhao Ternehäll, Shu Min Wang, Mahdad Sadeghi et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Comparison of Optical and Structural Quality of GaIn(N)As Analog and Digital Quantum Wells Grown by Molecular Beam Epitaxy

Huan Zhao Ternehäll, Shu Min Wang, Qing Xiang Zhao et al
Semiconductor Science and Technology. Vol. 23 (12), p. Art nr. 125002-
Artikel i vetenskaplig tidskrift
2007

Application of Rapid Thermal Annealing on 1.3-1.55 μm GaIn(N)As(Sb) Lasers Grown by Molecular Beam Epitaxy

Huan Zhao Ternehäll, Yingqiang Xu, Haiqiao Ni et al
Artikel i vetenskaplig tidskrift
2007

Gain Measurement and Anomalous Decrease of Gain at Ground State for Quantum-Dot Lasers

Jinlong Xiao, Yongzhen Huang, Yun Du et al
Chinese Physics Letters. Vol. 24, p. 2984-2986
Artikel i vetenskaplig tidskrift
2006

Post-Growth and in situ Annealing on GaInNAs(Sb) and Their Application in 1.55 µm Lasers

Huan Zhao Ternehäll, Yingqiang Xu, Haiqiao Ni et al
Semiconductor Science of Technology. Vol. 21, p. 279-281
Artikel i vetenskaplig tidskrift
2006

Characteristic of Rapid Thermal Annealing on GaIn(N)(Sb)As/GaAs Quantum Well Grown by Molecular Beam Epitaxy

Huan Zhao Ternehäll, Yingqiang Xu, Haiqiao Ni et al
Jounal of Applied Physics. Vol. 99, p. 034903-
Artikel i vetenskaplig tidskrift
2006

Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31 μm to 1.55 μm for GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy

Donghai Wu, Zhichuan Niu, Shiyong Zhang et al
Chinese Physics Letters. Vol. 23, p. 1005-1007
Artikel i vetenskaplig tidskrift
2006

High Performance of 1.55 μm Low-Temperature-Grown Resonant-Cavity-Enhanced Photodetector

Qin Han, Zhichuan Niu, Hongling Peng et al
Applied Physics Letters. Vol. 89, p. 131104-
Artikel i vetenskaplig tidskrift
2006

Enhancement of Photoluminescence Intensity of GaInNAs/GaNAs Quantum Wells by Two-Step Rapid Thermal Annealing

Huan Zhao Ternehäll, Yingqiang Xu, Cunzhu Tong et al
Artikel i vetenskaplig tidskrift
2006

Room Temperature Continuous Wave Operation 1.59 μm GaInNAsSb Quantum Well Lasers

Huan Zhao Ternehäll, Yun Du, Haiqiao Ni et al
The 14th Chinese Compound Semiconductor Materails, Microwave Devices and Optoelectronics Devices Conference
Paper i proceeding
2005

High Structural and Optical Quality 1.3 μm GaInNAs/GaAs Quantum Wells With Higher Indium Content Grown by Molecular Beam Epitaxy

Zhichuan Niu, Shiyong Zhang, Haiqiao Ni et al
International Symposium on Compound Semiconductors
Paper i proceeding
2005

Room Temperature Continuous Wave Operation 1.3 μm InAs/GaAs Quantum Dots Lasers

Huan Zhao Ternehäll, Qin Han, Hongling Peng et al
The 11th Chinese Optoelectronic Technique and Systerm Conference
Paper i proceeding
2005

1.55 μm GaInNAs Resonant-Cavity-Enhanced Photodetector Grown on GaAs

Qin Han, Xiaohong Yang, Zhichuan Niu et al
Applied Physics Letters. Vol. 87, p. 111105-
Artikel i vetenskaplig tidskrift
2005

GaAs-Based Room-Temperature Continuous-Wave 1.59 µm GaInNAsSb Single-Quantum-Well Laser Diode Grown by Molecular-Beam Epitaxy

Zhichuan Niu, Shiyong Zhang, Haiqiao Ni et al
Artikel i vetenskaplig tidskrift

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