Production of nano-holes patten on Si(111) by colloidal lithography for growth of InAs nanowires
Paper i proceeding, 2015

Colloidal lithography is a simple, versatile and low-cost technique that can be used to pattern diverse nanostructures on a wafer scale. In this work, colloidal lithography utilizing polystyrene nanoparticles as a lift-off mask was used to produce nanohole patterns on Si (111) substrates. The hole size, which is determined by the size of the polystyrene particles, can be well controlled by oxygen plasma shrinking. Using this technique, we were able to obtain nanohole pattern with feature size down to 50 nm, which is close to the limit that conventional lithographic techniques can reach, in a time-efficient and cost effective manner. InAs nanowires were successfully grown on the patterned substrates using molecular beam epitaxy.

InAs nanowires

semiconductors

colloidal lithography

Nanomaterials

selective area epitaxy

MBE

Författare

Elham Fadaly

Ines Massiot

Chalmers, Teknisk fysik, Bionanofotonik

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Alexander Dmitriev

Chalmers, Teknisk fysik, Bionanofotonik

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

15th International Conference on Nanotechnology

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Elektroteknik och elektronik

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

Mer information

Skapat

2017-10-07