Production of nano-holes patten on Si(111) by colloidal lithography for growth of InAs nanowires
Paper in proceedings, 2015

Colloidal lithography is a simple, versatile and low-cost technique that can be used to pattern diverse nanostructures on a wafer scale. In this work, colloidal lithography utilizing polystyrene nanoparticles as a lift-off mask was used to produce nanohole patterns on Si (111) substrates. The hole size, which is determined by the size of the polystyrene particles, can be well controlled by oxygen plasma shrinking. Using this technique, we were able to obtain nanohole pattern with feature size down to 50 nm, which is close to the limit that conventional lithographic techniques can reach, in a time-efficient and cost effective manner. InAs nanowires were successfully grown on the patterned substrates using molecular beam epitaxy.

InAs nanowires

semiconductors

colloidal lithography

Nanomaterials

selective area epitaxy

MBE

Author

Elham Fadaly

Ines Massiot

Chalmers, Applied Physics, Bionanophotonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Alexander Dmitriev

Chalmers, Applied Physics, Bionanophotonics

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

15th International Conference on Nanotechnology

Areas of Advance

Nanoscience and Nanotechnology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

Infrastructure

Nanofabrication Laboratory

More information

Created

10/7/2017