Mahdad Sadeghi

Effect of nano-apertures pattern on InAs nanowires evolution process grown by selective area molecular beam epitaxy

Fabrication of nanowire growth templates by forming pinholes in SiOx on Si

Production of nano-holes patten on Si(111) by colloidal lithography for growth of InAs nanowires

2015

Natural patterning of templates on GaAs by formation of cracks

Natural Patterning of Templates on GaAs by Formation of Cracks

2014

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE

Comparative Optical Studies of InGaAs/GaAs Quantum Wells Grown by MBE on (100) and (311)A GaAs Planes

Polarization-Resolved Magneto-Photoluminescence of InGaAs(N)/GaAs Quantum Wells

High quality strain-compensated multiple InAs/GaNAs quantum dot layers grown by MBE

Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates

2011

InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE

Comparative Optical Studies of GaInAs/GaAs Quantum Wells Grown by MBE on Conventional and High Index GaAs Planes

Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE

Contactless Electroreflectance, Photoluminescence and Time-Resolved Photoluminescence of GaInNAs Quantum Wells Obtained by the MBE Method with N-irradiation

Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding

Comparative Study of Spacer Layers for InAs Quantum Dot Stacks

2010

Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers

Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE

1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs

Thermal effects caused by action of powerful laser radiation on condensed matter

Metamorphic InGaAs Materials and Telecom Lasers

Material Studies for Quantum Dot Intermediate Band Solar Cells

10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm

A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

A 1.31 μm GaInNAs Triple Quantum Well Laser with 13 GHz Small Signal Modulation Bandwidth

Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers

Independent determination of In and N concentrations in GaInNAs alloys

Doping influence on structural property of linearly graded composition InGaAs buffer layer grown by MBE

13 GHz Bandwidth of 1.31 μm GaInNAs Triple Quantum Well Lasers

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

Growth and Characterization of GaInNAs by Molecular Beam Epitaxy Using a Nitrogen Irradiation Method

Reliability assessment and degradation analysis of 1.3 µm GaInNAs lasers

Growth and Characterization of GaInNAs Quantum Wells Using Nitrogen Irradiation in Molecular Beam Epitaxy

Static and dynamic performance optimization of a 1.3 µm GaInNAs ridge waveguide laser

High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Influence of Doping on Structural Properties of Graded InGaAs Layers Grown by MBE

Thermal performance investigation of DQW GaInNAs laser diodes

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Very Low Threshold Current Density 1.29 µm GaInNAs Triple Quantum Well Lasers Grown by MBE

Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy

Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)

Static and dynamic performance optimisation of a 1.3 mu m GaInNAs ridge waveguide laser

Photoluminescence microscopy investigation of lattice relaxation and defect formation processes in pseudomorphically strained InGaAsN multiple quantum wells

Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers

Comparison of Optical and Structural Quality of GaIn(N)As Analog and Digital Quantum Wells Grown by Molecular Beam Epitaxy

Evolution of Valence-Band Alignment with Nitrogen Content in GaNAs/GaAs Single Quantum Wells

Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers

Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 µm dilute nitride double quantum well lasers

Experimental analysis of increase open circuit voltage of a quantum dot intermediate band solar cell

Improvement of structural and optical quality of metamorphic InGaAs/InAlGaAs quantum wells by Be-doping

Metamorphic InGaAs quanum wells for light emission at 1.3 – 1.6 µm

Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers

Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy

Molecular beam epitaxial growth of highly strained long wavelength multiple quantum-well InGaAs/GaAs lasers with low threshold current density

Measurement of the group index and linewidth enhancement factor in 1.3 µm dilute nitride double quantum well lasers

Manipulation of strain relaxation in metamorphic heterostructures

Photoluminescence microscopy investigation of lattice relaxation and defect formation processes in pseudomorphically strained InGaAsN multiple quantum wells

Comparison of lattice relaxation processes in pseudomorphically strained InGaAsN/GaAs and InGaAs/GaAs multiple quantum wells

On the Temperature Dependence of the Threshold Current for GaInNAs/GaAs Quantum-Well Lasers

2007

A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz

Thermal performance investigation of DQW GaInNAs laser diodes

Simulation of DQW GaInNAs laser diodes

Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy

Optical properties of GaInNAs/GaAs quantum well structures

Electrical, optical and thermal simulation of DQW GaInNAs laser diodes

State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy

0.24 W F-Band Heterostructure Barrier Varactor Frequency Tripler

Thermal imaging and estimation of thermal performance of 1.3 µm InGaAsN/GaAs double quantum well laser diodes

2007

Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes

Signal frequency studies of an environmental application of a 65 nm region ion sensitive field effect transistor sensor

High Efficiency HBV Multipliers

10 Gb/s modulation of 1.3 µm GaInNAs lasers up to 110 degr.C

Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers

Dynamics and temperature-dependence of 1.3-μm GaInNAs double quantum-well lasers

High efficiency W-band HBV Tripler and Device Reliability Studies

The FAST ACCESS project: Low cost 1.3 µm sources for FAST ACCESS technologies

From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs

HBV tripler with 21% efficiency at 102 GHz

Development of Uni-Travelling-Carrier Photodiodes

Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy

Fabrication and Characterization of InGaAlAs/InP based Uni-Traveling-Carrier Photodiodes

Temperature Dependent of Gain and Recombination in Single and Double Quantum Well InGaAsN Structures Grown by MBE

Optimum Barrier Thickness Study for the Heterostructure Barrier Varactror Diode

Design, Fabrication and characterisation of High Power HBV Diodes

2. High performance 1.28 mm GaInNAs Double Quantum Well lasers

12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Strong 1.3-1.6 µm Light Emission from Metamorphic InGaAs Quantum Wells on GaAs

Effects of nitrogen incorporation on the properties of GaInNAs quantum well structures

The design and realisation of a high-power HBV multiplier source for THz-applications

High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers

Effects of growth temperature and post-growth thermal annealing on carrier localization and deep level emission in GaNAs/GaAs quantum well structures

Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber

Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Optical properties of GaInNAs/GaAs quantum well structures

High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm

Very low threshold current density of 1.3 µm GaInNAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy

6. Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization

Very low threshold current density of 1.3 um GaInNAs single quantum well lasers grown by molecular beam epitaxy

Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping

1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping

1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells

Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence

Charge carrier dynamics at the SiO2/SiC interface