Mahdad Sadeghi

Forskningsingenjör vid Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

MBE

Källa: chalmers.se

Visar 114 publikationer

2017

Effect of nano-apertures pattern on InAs nanowires evolution process grown by selective area molecular beam epitaxy

Muhammad Asad, Ghada Badawy, Huan Zhao Ternehäll et al
44th International Symposium on Compound Semiconductors (ISCS), 2017 Compound Semiconductor Week (CSW2017), Berlin, Germany, May 14-18, 2017
Paper i proceeding
2016

Fabrication of nanowire growth templates by forming pinholes in SiOx on Si

Huan Zhao Ternehäll, Elham Fadaly, Mahdad Sadeghi
The 43rd International Symposium on Compound Semiconductor
Paper i proceeding
2015

Production of nano-holes patten on Si(111) by colloidal lithography for growth of InAs nanowires

Elham Fadaly, Ines Massiot, Mahdad Sadeghi et al
15th International Conference on Nanotechnology
Paper i proceeding
2015

Natural patterning of templates on GaAs by formation of cracks

Yuxin Song, H. Xu, Y. Li et al
AIP Advances. Vol. 5 (6), p. Art Nr 067146-
Artikel i vetenskaplig tidskrift
2014

Natural Patterning of Templates on GaAs by Formation of Cracks

Y. X. Song, Y. Li, H. Xu et al
The 18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA, September 7-12, 2014
Paper i proceeding
2014

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

V. Lopes-Oliveira, L. K. S. Herval, V. O. Gordo et al
Journal of Applied Physics. Vol. 116 (23)
Artikel i vetenskaplig tidskrift
2013

High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE

Hong Ye, Mahdad Sadeghi, Yuxin Song et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 10 (5), p. 765-768
Paper i proceeding
2012

Comparative Optical Studies of InGaAs/GaAs Quantum Wells Grown by MBE on (100) and (311)A GaAs Planes

A. Khatab, M. Shafi, R.H. Mari et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 9 (7), p. 1621-1623
Artikel i vetenskaplig tidskrift
2012

Polarization-Resolved Magneto-Photoluminescence of InGaAs(N)/GaAs Quantum Wells

L. K. S. Herval, V. Orsi Gordo, A. Khatab et al
International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN2012), Dresden, Germany July 22-27, 2012
Paper i proceeding
2012

High quality strain-compensated multiple InAs/GaNAs quantum dot layers grown by MBE

Hong Ye, Yuxin Song, Mahdad Sadeghi et al
39th International Symposium on Compound Semiconductors (ISCS2012), Santa Barbara, CA, USA, August 27-30, 2012
Paper i proceeding
2012

Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates

A. Khatab, M. Henini, G. Patriarche et al
The 17th International Conference on Molecular Beam Epitaxy, Nara, Japan, September 23-28, 2012
Paper i proceeding
2011

InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate

Mohammad Hadi Tavakoli Dastjerdi, Anke Sanz-Velasco, Josip Vukusic et al
IEEE Electron Device Letters. Vol. 32 (2), p. 140-142
Artikel i vetenskaplig tidskrift
2011

Comparative Optical Studies of GaInAs/GaAs Quantum Wells Grown by MBE on Conventional and High Index GaAs Planes

A. Khatab, M. Shafi, R. H. Mari et al
16th Semiconducting and Insulating Materials Conference, Stockholm, Sweden, June 19-23, 2011
Paper i proceeding
2011

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Physica Status Solidi (B): Basic Research. Vol. 248 (5), p. 1207-1211
Artikel i vetenskaplig tidskrift
2011

Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE

Yuxin Song, Shu Min Wang, Cao Xiaohui et al
Journal of Crystal Growth. Vol. 323 (1), p. 21-25
Artikel i vetenskaplig tidskrift
2011

Contactless Electroreflectance, Photoluminescence and Time-Resolved Photoluminescence of GaInNAs Quantum Wells Obtained by the MBE Method with N-irradiation

M Baranowski, R Kudrawiec, M Syperek et al
Semiconductor Science and Technology. Vol. 26 (4), p. 045012-
Artikel i vetenskaplig tidskrift
2010

Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers

Yuxin Song, Shu Min Wang, Zonghe Lai et al
Applied Physics Letters. Vol. 97 (9), p. 091903-
Artikel i vetenskaplig tidskrift
2010

Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE

Yuxin Song, Shu Min Wang, Zonghe Lai et al
16th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2010

Thermal effects caused by action of powerful laser radiation on condensed matter

O. Y. Semchuk, L. G. Grechko, L. B. Lerman et al
Journal of Optoelectronics and Advanced Materials. Vol. 12 (3), p. 586-588
Artikel i vetenskaplig tidskrift
2010

1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
E-MRS Spring Meeting 2010, Strasbourg, France, June 7-10, 2010 (invited)
Paper i proceeding
2010

Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding

Mohammad Hadi Tavakoli Dastjerdi, Anke Sanz-Velasco, Josip Vukusic et al
Electronics Letters. Vol. 46 (14), p. 1013-1014
Artikel i vetenskaplig tidskrift
2010

Comparative Study of Spacer Layers for InAs Quantum Dot Stacks

T. W. Reenaas, PE Vullum, Yuxin Song et al
Proceeding of Indium Phosphide and Related Materials 2010, Takamatsu, Japan, May 31-June 4 2010
Paper i proceeding
2009

Doping influence on structural property of linearly graded composition InGaAs buffer layer grown by MBE

Yuxin Song, Shu Min Wang, Ivar Tångring et al
15th European Molecular Beam Epitaxy Workshop, p. TuP11-
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2009

10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm

Mihail Dumitrescu, M. Wolf, K Schultz et al
2009 Conference on Optical Fiber Communication, OFC 2009; San Diego, CA; United States; 22 March 2009 through 26 March 2009
Paper i proceeding
2009

Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

Yuxin Song, Shu Min Wang, Ivar Tångring et al
Journal of Applied Physics. Vol. 106 (12), p. 123531-
Artikel i vetenskaplig tidskrift
2009

Reliability assessment and degradation analysis of 1.3 µm GaInNAs lasers

W Lu, S. Bull, Jun Lim et al
Journal of Applied Physics. Vol. 106 (9), p. 093110-
Artikel i vetenskaplig tidskrift
2009

Independent determination of In and N concentrations in GaInNAs alloys

W Lu, Jun Lim, S. Bull et al
Semiconductor Science and Technology. Vol. 24 (10), p. 105016-
Artikel i vetenskaplig tidskrift
2009

Material Studies for Quantum Dot Intermediate Band Solar Cells

S.F. Thomassen, T. W. Reenaas, B.O. Fimland et al
15th European Molecular Beam Epitaxy Workshop, Zakopane, Poland, March 8-11, 2009
Paper i proceeding
2009

A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

Ivar Tångring, Yuxin Song, Zonghe Lai et al
Journal of Crystal Growth. Vol. 311, p. 1684-
Artikel i vetenskaplig tidskrift
2009

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Journal of Crystal Growth. Vol. 311, p. 1863-1867
Artikel i vetenskaplig tidskrift
2009

Growth and Characterization of GaInNAs by Molecular Beam Epitaxy Using a Nitrogen Irradiation Method

Huan Zhao Ternehäll, Shu Min Wang, Qing Xiang Zhao et al
Journal of Crystal Growth. Vol. 311 (7), p. 1723-1727
Artikel i vetenskaplig tidskrift
2009

Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
IEEE Photonics Technology Letters. Vol. 21 (134), p. 134-136
Artikel i vetenskaplig tidskrift
2009

13 GHz Bandwidth of 1.31 μm GaInNAs Triple Quantum Well Lasers

Huan Zhao Ternehäll, Åsa Haglund, Shu Min Wang et al
The 15th European MBE Workshop, Zakopane, Poland
Paper i proceeding
2009

Metamorphic InGaAs Materials and Telecom Lasers

Shu Min Wang, Yuxin Song, Ivar Tangring et al
International Conference on Materials and Advanced Technology (ICMAT) 2009, Singapore, June 28 - July 3, 2009. (invited paper)
Paper i proceeding
2009

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Microelectronics Journal. Vol. 40, p. 386-391
Artikel i vetenskaplig tidskrift
2009

A 1.31 μm GaInNAs Triple Quantum Well Laser with 13 GHz Small Signal Modulation Bandwidth

Huan Zhao Ternehäll, Åsa Haglund, Petter Westbergh et al
Electronics Letters. Vol. 45, p. 356-357
Artikel i vetenskaplig tidskrift
2008

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Workshop on Recent Advances in Low Dimensional Structures and Devices (WRA-LDSD)
Paper i proceeding
2008

Thermal performance investigation of DQW GaInNAs laser diodes

J.J. Lim, R. MacKenzie, S. Sujecki et al
Optical and Quantum Electronics. Vol. 40 (5-6), p. 385-390
Artikel i vetenskaplig tidskrift
2008

Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers

R. MacKenzie, S. Bull, J.J. Lim et al
Physica Status Solidi C. Vol. 5 (2), p. 490-494
Artikel i vetenskaplig tidskrift
2008

Influence of Doping on Structural Properties of Graded InGaAs Layers Grown by MBE

Ivar Tångring, Yuxin Song, Shu Min Wang et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers

Huan Zhao Ternehäll, Göran Adolfsson, Shu Min Wang et al
Electronics Letters. Vol. 44 (7), p. 475-477
Artikel i vetenskaplig tidskrift
2008

Very Low Threshold Current Density 1.29 µm GaInNAs Triple Quantum Well Lasers Grown by MBE

Huan Zhao Ternehäll, Göran Adolfsson, Shu Min Wang et al
Electronics Letter. Vol. 44, p. 416-417
Artikel i vetenskaplig tidskrift
2008

High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6909, p. 690905-
Paper i proceeding
2008

Static and dynamic performance optimisation of a 1.3 mu m GaInNAs ridge waveguide laser

Jun Lim, R. MacKenzie, S. Sujecki et al
Optical and Quantum Electronics. Vol. 40 (14-15), p. 1181-1186
Artikel i vetenskaplig tidskrift
2008

Photoluminescence microscopy investigation of lattice relaxation and defect formation processes in pseudomorphically strained InGaAsN multiple quantum wells

W Lu, S. Chao, A.V. Adrianov et al
Physica Status Solidi C. Vol. 5 (2), p. 467-472
Artikel i vetenskaplig tidskrift
2008

Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
21st IEEE International Semiconductor Laser Conference, ISLC 2008; Sorrento; Italy; 14 September 2008 through 18 September 2008, p. 55-56
Paper i proceeding
2008

Static and dynamic performance optimization of a 1.3 µm GaInNAs ridge waveguide laser

J.J. Lim, R. MacKenzie, S. Sujecki et al
2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08; Nottingham; United Kingdom; 1 September 2008 through 4 September 2008, p. 121-122
Paper i proceeding
2008

Comparison of Optical and Structural Quality of GaIn(N)As Analog and Digital Quantum Wells Grown by Molecular Beam Epitaxy

Huan Zhao Ternehäll, Shu Min Wang, Qing Xiang Zhao et al
Semiconductor Science and Technology. Vol. 23 (12), p. Art nr. 125002-
Artikel i vetenskaplig tidskrift
2008

Growth and Characterization of GaInNAs Quantum Wells Using Nitrogen Irradiation in Molecular Beam Epitaxy

Huan Zhao Ternehäll, Shu Min Wang, Mahdad Sadeghi et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
IEEE Journal of Quantum Electronics. Vol. 44 (7), p. 607-616
Artikel i vetenskaplig tidskrift
2008

Evolution of Valence-Band Alignment with Nitrogen Content in GaNAs/GaAs Single Quantum Wells

J Shao, W Lu, Mahdad Sadeghi et al
Applied Physics Letters. Vol. 93 (3), p. Art. Nr. 031904-
Artikel i vetenskaplig tidskrift
2007

Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy

Ivar Tångring, Shu Min Wang, Zonghe Lai et al
Journal of Crystal Growth. Vol. 301 (SPEC. ISS.), p. 971-974
Artikel i vetenskaplig tidskrift
2007

Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 µm dilute nitride double quantum well lasers

R. MacKenzie, J.J. Lim, S. Bull et al
IET Optoelectronics. Vol. 1, p. 284-
Artikel i vetenskaplig tidskrift
2007

Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers

R. MacKenzie, Jun Lim, S. Bull et al
EMRS Conference, Strasbourg, France, 2007
Paper i proceeding
2007

GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Ivar Tangring et al
MBE China 2007, Nanchang, China, October 2007 (invited)
Paper i proceeding
2007

Metamorphic InGaAs quanum wells for light emission at 1.3 – 1.6 µm

Shu Min Wang, Ivar Tangring, Qinfen Gu et al
Thin Solid Films. Vol. 515 (10), p. 4348-4351
Artikel i vetenskaplig tidskrift
2007

Optical properties of GaInNAs/GaAs quantum well structures

Qing Xiang Zhao, Magnus Willander, Shu Min Wang et al
Thin Solid Films. Vol. 515, p. 4423-
Artikel i vetenskaplig tidskrift
2007

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
Electronic Letters. Vol. 43 (8), p. 454-456
Artikel i vetenskaplig tidskrift
2007

Molecular beam epitaxial growth of highly strained long wavelength multiple quantum-well InGaAs/GaAs lasers with low threshold current density

Göran Adolfsson, Yongqiang Wei, Shu Min Wang et al
14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain
Poster (konferens)
2007

Thermal performance investigation of DQW GaInNAs laser diodes

Jun Lim, R. MacKenzie, S. Sujecki et al
NUSOD Conference, Newark, New Jersey, USA, Sept. 2007
Paper i proceeding
2007

Simulation of DQW GaInNAs laser diodes

J.J. Lim, R. MacKenzie, S. Sujecki et al
IET Optoelectronics. Vol. 1, p. 259-
Artikel i vetenskaplig tidskrift
2007

Electrical, optical and thermal simulation of DQW GaInNAs laser diodes

Jun Lim, R. MacKenzie, S. Sujecki et al
Semiconductor and Integrated Optoelectronics Conference, Cardiff, Wales, UK, April 2007
Paper i proceeding
2007

Measurement of the group index and linewidth enhancement factor in 1.3 µm dilute nitride double quantum well lasers

R. MacKenzie, Jun Lim, S. Bull et al
Semiconductor and Integrated Optoelectronics Conference, Cardiff, Wales, UK, April 2007
Paper i proceeding
2007

0.24 W F-Band Heterostructure Barrier Varactor Frequency Tripler

Josip Vukusic, Tomas Bryllert, Mahdad Sadeghi et al
WOCSDICE 2007, p. 419-422
Paper i proceeding
2007

On the Temperature Dependence of the Threshold Current for GaInNAs/GaAs Quantum-Well Lasers

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
European Semiconductor Laser Workshop, Berlin, Germany.
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2007

Experimental analysis of increase open circuit voltage of a quantum dot intermediate band solar cell

S.F. Thomassen, T. Worren, B.O. Fimland et al
22nd European Photovoltaic Solar Energy Conference and Exhibition, Milan, Italy, September 2007
Paper i proceeding
2007

Comparison of lattice relaxation processes in pseudomorphically strained InGaAsN/GaAs and InGaAs/GaAs multiple quantum wells

S. Chao, W Lu, S. Bull et al
Semiconductor and Integrated Optoelectronics Conference, Cardiff, Wales, UK, April 2007
Paper i proceeding
2007

Manipulation of strain relaxation in metamorphic heterostructures

Ivar Tångring, Zonghe Lai, Shu Min Wang et al
Applied Physics Letters. Vol. 90, p. 071904-
Artikel i vetenskaplig tidskrift
2007

Improvement of structural and optical quality of metamorphic InGaAs/InAlGaAs quantum wells by Be-doping

Ivar Tångring, Mahdad Sadeghi, Shu Min Wang et al
14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain, 2007.
Poster (konferens)
2007

Signal frequency studies of an environmental application of a 65 nm region ion sensitive field effect transistor sensor

K. Risveden, S. Bhand, J. F. Ponten et al
Sensors and Actuators, B: Chemical. Vol. 127 (1), p. 198-203
Artikel i vetenskaplig tidskrift
2007

Thermal imaging and estimation of thermal performance of 1.3 µm InGaAsN/GaAs double quantum well laser diodes

R. MacKenzie, S. Bull, Jun Lim et al
European Semiconductor Laser Workshop, Berlin, Germany, Sept. 2007
Paper i proceeding
2007

State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Qing Xiang Zhao et al
the 14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain, 2007 (keynote invited talk)
Paper i proceeding
2007

A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz

Josip Vukusic, Tomas Bryllert, Arezoo Emadi et al
IEEE Electron Device Letters. Vol. 28 (5), p. 340-342
Artikel i vetenskaplig tidskrift
2007

Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes

Arezoo Emadi, Tomas Bryllert, Mahdad Sadeghi et al
Applied Physics Letters. Vol. 90 (1), p. 012108-3
Artikel i vetenskaplig tidskrift
2007

Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

M Kaniewska, Olof Engström, M Pacholak-Cybulska et al
Physica Status Solidi (a). Vol. 204, p. 987-
Artikel i vetenskaplig tidskrift
2006

High Efficiency HBV Multipliers

Jan Stake, Tomas Bryllert, Arezoo Emadi et al
Proceedings of the 1st European Microwave Integrated Circuits Conference, p. 39-42
Paper i proceeding
2006

HBV tripler with 21% efficiency at 102 GHz

Josip Vukusic, Byron Alderman, Arezoo Emadi et al
Electronics Letters. Vol. 42 (6), p. 355-356
Artikel i vetenskaplig tidskrift
2006

Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers

Ying Fu, Yongqiang Wei, X. D. Wang et al
Journal of Applied Physics. Vol. 100 (7)
Artikel i vetenskaplig tidskrift
2006

The FAST ACCESS project: Low cost 1.3 µm sources for FAST ACCESS technologies

Eric Larkins, Jun Lim, Tom Foxon et al
Workshop on GaInNAs: Materials, devices, and technology
Paper i proceeding
2006

High efficiency W-band HBV Tripler and Device Reliability Studies

Jan Stake, Arezoo Emadi, Josip Vukusic et al
4th ESA Workshop on Millimetre Wave Technology and Applications
Paper i proceeding
2006

Optimum Barrier Thickness Study for the Heterostructure Barrier Varactror Diode

Arezoo Emadi, Tomas Bryllert, Josip Vukusic et al
WOCSDICE 2006, p. 55-57
Paper i proceeding
2006

Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy

Qing Xiang Zhao, Shu Min Wang, Mahdad Sadeghi et al
Applied Physics Letters. Vol. 89 (3), p. 031907-
Artikel i vetenskaplig tidskrift
2006

Development of Uni-Travelling-Carrier Photodiodes

Josip Vukusic, Henrik Sunnerud, Mahdad Sadeghi et al
4th ESA Workshop on Millimetre Wave Technology and Applications
Paper i proceeding
2006

Fabrication and Characterization of InGaAlAs/InP based Uni-Traveling-Carrier Photodiodes

Josip Vukusic, Henrik Sunnerud, Andreas Wiberg et al
The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, p. 138-
Paper i proceeding
2006

Temperature Dependent of Gain and Recombination in Single and Double Quantum Well InGaAsN Structures Grown by MBE

Peter Smowton, J Thomson, A George et al
Workshop on GaInNAs: Materials, Devices, and Technology
Paper i proceeding
2006

From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs

Shu Min Wang, Qing Xiang Zhao, Yongqiang Wei et al
WOCSDICE 2006
Paper i proceeding
2006

10 Gb/s modulation of 1.3 µm GaInNAs lasers up to 110 degr.C

Johan Gustavsson, Yongqiang Wei, Mahdad Sadeghi et al
IEE Electronics Letters. Vol. 42 (16), p. 925-926
Artikel i vetenskaplig tidskrift
2006

Dynamics and temperature-dependence of 1.3-μm GaInNAs double quantum-well lasers

Yongqiang Wei, Johan Gustavsson, Mahdad Sadeghi et al
IEEE Journal of Quantum Electronics. Vol. 42 (12), p. 1274-1280
Artikel i vetenskaplig tidskrift
2005

The design and realisation of a high-power HBV multiplier source for THz-applications

Jan Stake, Arezoo Emadi, Tomas Bryllert et al
WOCSDICE 2005, p. 169-170
Artikel i vetenskaplig tidskrift
2005

6. Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al
APPLIED PHYSICS LETTERS. Vol. 87 (8), p. 081102-
Artikel i övriga tidskrifter
2005

Effects of nitrogen incorporation on the properties of GaInNAs quantum well structures

Qing Xiang Zhao, Shu Min Wang, Mahdad Sadeghi et al
Journal of Applied Physics. Vol. 97 (7), p. 073714-
Artikel i vetenskaplig tidskrift
2005

Effects of growth temperature and post-growth thermal annealing on carrier localization and deep level emission in GaNAs/GaAs quantum well structures

Qing Xiang Zhao, Shu Min Wang, Wei Yongqiang et al
Applied Physics Letters. Vol. 86 (12), p. 121910-
Artikel i vetenskaplig tidskrift
2005

Design, Fabrication and characterisation of High Power HBV Diodes

Arezoo Emadi, Josip Vukusic, Mattias Ingvarson et al
16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.), p. Session: P05-04
Paper i proceeding
2005

Strong 1.3-1.6 µm Light Emission from Metamorphic InGaAs Quantum Wells on GaAs

Shu Min Wang, Ivar Tångring, Qinfen Gu et al
3rd International Conference on Materials for Advanced Technologies
Paper i proceeding
2005

12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Yongqiang Wei, Shu Min Wang, Xiaodong Wang et al
JOURNAL OF CRYSTAL GROWTH. Vol. 278, p. 747-
Artikel i övriga tidskrifter
2005

2. High performance 1.28 mm GaInNAs Double Quantum Well lasers

Yongqiang Wei, Mahdad Sadeghi, Shu Min Wang et al
ELECTRONICS LETTERS. Vol. 41 (24), p. 1328-
Artikel i övriga tidskrifter
2005

High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm

Shu Min Wang, Qinfen Gu, Yongqiang Wei et al
Applied Physics Letters. Vol. 87, p. 141913-
Artikel i vetenskaplig tidskrift
2005

High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers

Yongqiang Wei, Anders Larsson, Johan Gustavsson et al
14th European Semiconductor Laser Workshop,Glasgow, UK
Paper i proceeding
2005

Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber

Hans Lindberg, Martin Strassner, Mahdad Sadeghi et al
Optics Letters. Vol. 30 (20), p. 2793-2795
Artikel i vetenskaplig tidskrift
2005

Very low threshold current density of 1.3 µm GaInNAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy

Shu Min Wang, Yongqiang Wei, Xiaodong Wang et al
Journal of Crystal Growth. Vol. 278, p. 734-
Artikel i vetenskaplig tidskrift
2005

Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al
CLEO-/EUROPE-EQEC 2005, Muchen, Germany
Paper i proceeding
2005

Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization

Qing Xiang Zhao, Magnus Willander, Shu Min Wang et al
Physics Letters, Section A: General, Atomic and Solid State Physics. Vol. 341 (1-4), p. 297-
Artikel i vetenskaplig tidskrift
2005

Optical properties of GaInNAs/GaAs quantum well structures

Zhao Qingxiang, Willander Magnus, Shu Min Wang et al
3rd International Conference on Materials for Advanced Technologies, Singapore
Paper i proceeding
2004

1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping

Shu Min Wang, Qing Xiang Zhao, Xia Dong Wang et al
IPRM04, Kagoshima, Japan, May 31 - June 4, 2004
Paper i proceeding
2004

Very low threshold current density of 1.3 um GaInNAs single quantum well lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Xia Dong Wang et al
13th International Conference on Molecular Beam Epitaxy, Edinburgh, UK, August 22-27, 2004
Paper i proceeding
2004

Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping

Xiao Dong Wang, Shu Min Wang, Yongqiang Wei et al
IPRM04, Kagoshime, Japan, May 31 - June 4, 2004
Paper i proceeding
2004

1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells

Shu Min Wang, Qing Xiang Zhao, Yongqiang Wei et al
Applied Physics Letter. Vol. 85, p. 875-
Artikel i vetenskaplig tidskrift
2003

Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
Journal of Crystal Growth. Vol. 251 (1-4), p. 145-9
Artikel i vetenskaplig tidskrift
2002

Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
International Conference on Molecular Beam Epitaxy, 2002, p. 285-6
Paper i proceeding
2002

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
Applied Physics Letters. Vol. 81 (7), p. 1195-7
Artikel i vetenskaplig tidskrift
2001

Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence

Fariba Ferdos, Mahdad Sadeghi, Qing Xiang Zhao et al
Journal of Crystal Growth. Vol. 227-228, p. 1140-5
Artikel i vetenskaplig tidskrift
1998

Charge carrier dynamics at the SiO2/SiC interface

Mahdad Sadeghi
Licentiatavhandling

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