Natural patterning of templates on GaAs by formation of cracks
Artikel i vetenskaplig tidskrift, 2015

Substrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile strain was intentionally brought in with a GaAs or GaNAs layer above an InGaAs layer on GaAs substrates. Surface crack patterns successfully formed during the strain relaxation. The strain in a 1 μm buffer layer atop the pattern was found effectively relaxed. Detailed residual strain distribution was simulated by the finite element method.

Författare

Yuxin Song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

H. Xu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

AIP Advances

2158-3226 (ISSN)

Vol. 5 Art Nr 067146- 067146

Ämneskategorier

Nanoteknik

DOI

10.1063/1.4922961