Shu Min Wang

Biträdande professor vid Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Visar 315 publikationer

2019

Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge(1 1 1) substrate

Delong Han, Han Ye, Y Song et al
Applied Surface Science. Vol. 463, p. 581-586
Artikel i vetenskaplig tidskrift
2018

Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films

L. Yue, X Chen, Yanchao Zhang et al
Journal of Alloys and Compounds. Vol. 742, p. 780-789
Artikel i vetenskaplig tidskrift
2018

Effects of growth conditions on optical quality and surface morphology of InGaAsBi

Jia Kai Li, L. K. Ai, Ming Qi et al
Chinese Physics B. Vol. 27 (4)
Artikel i vetenskaplig tidskrift
2018

A comparative study of selective dry and wet etching of germanium-tin (Ge1-xSnx) on germanium

Y. Han, Y Li, Y Song et al
Semiconductor Science and Technology. Vol. 33 (8)
Artikel i vetenskaplig tidskrift
2018

Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model

Chang Wang, Wenwu Pan, Konstantin Kolokolov et al
Chinese Physics Letters. Vol. 35 (5)
Artikel i vetenskaplig tidskrift
2018

Wavelength extension in GaSbBi quantum wells using delta-doping

Yanchao Zhang, L. Yue, X Chen et al
Journal of Alloys and Compounds. Vol. 744, p. 667-671
Artikel i vetenskaplig tidskrift
2018

Abnormal strain in suspended GeSn microstructures

Yi Han, Yuxin Song, Xiren Chen et al
Materials Research Express. Vol. 5 (3)
Artikel i vetenskaplig tidskrift
2018

Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy

Shuxing Zhou, Likun Ai, Ming Qi et al
Journal of Materials Science. Vol. 53 (5), p. 3537-3543
Artikel i vetenskaplig tidskrift
2018

K · p calculations of bismuth induced changes in band structure of InN1-XBix, GaN1-X Bix and AlN1-X Bix alloys

Junyu Zhang, P. F. Lu, Y. J. Chen et al
Modern Physics Letters B. Vol. 32 (11)
Artikel i vetenskaplig tidskrift
2017

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

L Wang, L. Y. Zhang, L. Yue et al
Crystals. Vol. 7 (3), p. Article no 63 -
Artikel i vetenskaplig tidskrift
2017

Effect of nano-apertures pattern on InAs nanowires evolution process grown by selective area molecular beam epitaxy

Muhammad Asad, Ghada Badawy, Huan Zhao Ternehäll et al
44th International Symposium on Compound Semiconductors (ISCS), 2017 Compound Semiconductor Week (CSW2017), Berlin, Germany, May 14-18, 2017
Paper i proceeding
2017

Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

Z. P. Zhang, Y. X. Song, Y. Li et al
AIP Advances. Vol. 7 (10)
Artikel i vetenskaplig tidskrift
2017

Iso-electronic centers in III-V semiconductors studied by Scanning Tunneling Microscopy

C K Krammel, R Plantega, M Roy et al
8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017
Paper i proceeding
2017

Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy

Z. P. Zhang, Y. X. Song, Q. M. Chen et al
Journal of Physics D: Applied Physics. Vol. 50 (46)
Artikel i vetenskaplig tidskrift
2017

Structural, electronic, vibrational and optical properties of Bi-n clusters

D. Liang, W. T. Shen, C. F. Zhang et al
Modern Physics Letters B. Vol. 31 (28)
Artikel i vetenskaplig tidskrift
2017

1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

X. Y. Wu, W. W. Pan, Z. P. Zhang et al
ACS Photonics. Vol. 4 (6), p. 1322-1326
Artikel i vetenskaplig tidskrift
2017

1140 nm electrically injected GaAsBi/GaAs single quantum well laser diodes

Juanjuan Liu, Wenwu Pan, Yaoyao Li et al
8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017
Paper i proceeding
2017

Quasiparticle and optical properties of strained stanene and stanane

P. F. Lu, L. Wu, Chuanghua Yang et al
Scientific Reports. Vol. 7 (1), p. 8-
Artikel i vetenskaplig tidskrift
2017

Structural properties of GeSn thin films grown by molecular beam epitaxy

Z. P. Zhang, Y. X. Song, Z. Y. S. Zhu et al
AIP Advances. Vol. 7 (4), p. Article number 045211-
Artikel i vetenskaplig tidskrift
2017

Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy

C. M. Krammel, M. Roy, J. Tilley et al
Physical Review Materials. Vol. 1 (3), p. Article Number: 034606 -
Artikel i vetenskaplig tidskrift
2017

Structural and optical properties of GaSbBi/GaSb quantum wells

Li Yue, X Chen, Yanchao Zhang et al
8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017
Paper i proceeding
2017

Electrically pumped 1.136 um GaAsBi/AlGaAs quantum well lasers grown by molecular beam epitaxy

Xiaoyan Wu, Wenwu Pan, Juanjuan Liu et al
19th Euro MBE Workshop, Korobitsyno, St Petersburg, Russia, March 19-22, 2017
Paper i proceeding
2017

Photoluminescence of GaSbBi/GaSb Quantum Wells Grown by Molecular Beam Epitaxy

L Yue, Y C Zhang, X R Chen et al
44th International Symposium on Compound Semiconductors (ISCS), 2017 Compound Semiconductor Week (CSW2017), Berlin, Germany, May 14-18, 2017
Paper i proceeding
2017

Nanoscale distribution of Bi atoms in InP1−xBix

L Zhang, M Wu, X Chen et al
Scientific Reports. Vol. 7 (1), p. 12278-
Artikel i vetenskaplig tidskrift
2017

High-Transparency Al/Bi2Te3 Double-Barrier Heterostructures

luca galletti, Sophie Charpentier, Yuxin Song et al
IEEE Transactions on Applied Superconductivity. Vol. 27, p. 1800404-
Artikel i vetenskaplig tidskrift
2017

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

Wenwu Pan, Liyao Zhang, Liang Zhu et al
Semiconductor Science and Technology. Vol. 32 (1)
Artikel i vetenskaplig tidskrift
2017

Delta-doping of GaSbBi Quantum Wells Grown by Molecular Beam Epitaxy

Yanchao Zhang, Li Yue, X Chen et al
8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017
Paper i proceeding
2017

Light emitting devices of dilute bismides

Shu Min Wang, Xiaoyan Wu, Wenwu Pan et al
8th International Workshop on Bi-containing Semiconductors, Marburg, Germany, July 23-26, 2017 (invited talk)
Paper i proceeding
2017

Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator

Sophie Charpentier, luca galletti, Gunta Kunakova et al
Nature Communications. Vol. 8 (1)
Artikel i vetenskaplig tidskrift
2017

Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy

S. X. Zhou, M. Qi, L. K. Ai et al
Japanese Journal of Applied Physics. Vol. 56 (3)
Artikel i vetenskaplig tidskrift
2017

Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

Z Zhu, Y Song, Z. Zhang et al
Journal of Applied Physics. Vol. 122 (9), p. 94304-
Artikel i vetenskaplig tidskrift
2017

Closing the bandgap for III-V nitrides toward mid-infrared and THz applications

P. F. Lu, D. Liang, Y. J. Chen et al
Scientific Reports. Vol. 7 (1), p. Art. no 10594-
Artikel i vetenskaplig tidskrift
2017

Phase transitions and elastic properties of InN1-xBix under high pressure

P. F. Lu, Min Zhang, Dan Liang et al
8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017
Paper i proceeding
2017

Photoluminescence and photoreflectance study of InGaAs(Bi) single quantum wells with variable experimental conditions

Jun Shao, Liang Zhu, X Chen et al
8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017
Paper i proceeding
2017

Tunable band gaps in stanene/MoS2 heterostructures

D. Liang, H. He, P. F. Lu et al
Journal of Materials Science. Vol. 52 (10), p. 5799-5806
Artikel i vetenskaplig tidskrift
2017

Electrically injected GaAsBi/GaAs single quantum well laser diodes

Juanjuan Liu, Wenwu Pan, Xiaoyan Wu et al
AIP Advances. Vol. 7 (11), p. Article Number: 115006 -
Artikel i vetenskaplig tidskrift
2017

Electrically pumped GaAsBi laser diodes

Shu Min Wang, Xiaoyan Wu, Juanjuan Liu et al
19th International Conference on Transparent Optical Networks, Girona, Spain, July 2-6, 2017 (invited talk)
Paper i proceeding
2017

Electronic and excitonic properties of two-dimensional and bulk InN crystals

D. Liang, R. G. Quhe, Y. J. Chen et al
RSC Advances. Vol. 7 (67), p. 42455-42461
Artikel i vetenskaplig tidskrift
2017

Influence of bismuth atoms on electron g factor of InGaAs(Bi) quantum wells investigated by magneto photoluminescence

Liangqing Zhu, X Chen, yuxin song et al
8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017
Paper i proceeding
2017

Suspended GeSn microstructure for light source on Si

Y. Han, Y. Li, Y. X. Song et al
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, San Juan, Puerto Rico, 10-12 July 2017, p. 69-70
Paper i proceeding
2017

Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission

Li Yue, yuxin song, X Chen et al
Journal of Alloys and Compounds. Vol. 695, p. 753-759
Artikel i vetenskaplig tidskrift
2017

Molecular Beam Epitaxy of GeSn Thin Films on Ge

Z. Zhang, yuxin song, Z. Y. S. Zhu et al
19th Euro MBE Workshop, Korobitsyno, St Petersburg, Russia, March 19-22, 2017
Paper i proceeding
2017

8 band k.p modeling of electronic and material gain properties of InGaAs/GaAsBi type II quantum wells grown by MBE

C Wang, W W Pan, Shu Min Wang
19th Euro MBE Workshop, Korobitsyno, St Petersburg, Russia, March 19-22, 2017
Paper i proceeding
2017

Structural and elastic properties of zinc-blende and wurtzite InN1-xBix alloys

Min Zhang, C. F. Zhang, Dan Liang et al
Journal of Alloys and Compounds. Vol. 708, p. 323-327
Artikel i vetenskaplig tidskrift
2017

Spin injection and helicity control of surface spin photocurrent in a three dimensional topological insulator

Y. Q. Huang, Y. X. Song, Shu Min Wang et al
Nature Communications. Vol. 8, p. Article Number: 15401-
Artikel i vetenskaplig tidskrift
2017

Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

Z. Y. S. Zhu, yuxin song, Q Chen et al
Nanoscale Research Letters. Vol. 12, p. Article no 472 -
Artikel i vetenskaplig tidskrift
2017

Negative thermal quenching of below-bandgap photoluminescence in InPBi

X Chen, Xiaoyan Wu, Li Yue et al
Applied Physics Letters. Vol. 110 (5)
Artikel i vetenskaplig tidskrift
2017

GeSn/Ge dual-nanowire heterostructure

Z. Y. S. Zhu, yuxin song, Yi Han et al
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017, p. 71-72
Paper i proceeding
2017

Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy

Y. Li, Y. X. Song, Z. P. Zhang et al
Materials Research Express. Vol. 4 (4), p. Article nr 045907 -
Artikel i vetenskaplig tidskrift
2017

Bismuth incorporation in different configurations of InP1-xBix alloys

Dan Liang, Wanting Shen, Ru Zhang et al
8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017
Paper i proceeding
2017

Bi2Te3 photoconductive detectors on Si

J. J. Liu, Y. Li, Y. X. Song et al
Applied Physics Letters. Vol. 110 (14)
Artikel i vetenskaplig tidskrift
2017

Novel group IV nano- and micro-structures for light sources on silicon

Y. Li, Y. Han, Y. X. Song et al
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017, p. 43-44
Paper i proceeding
2017

Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy

C Krammel, M Roy, F J Tilley et al
Physical Review Materials. Vol. 1, p. 34606-
Artikel i vetenskaplig tidskrift
2017

Theoretical and experimental studies of electronic band structure of InGaAs/GaAsBi/InGaAs quantum wells grown on GaAs

Jan Kopaczek, Marta Gladysiewicz, Wenwu Pan et al
8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017
Paper i proceeding
2017

Influence of Bi on morphology and optical properties of InAs QDs

L Wang, Wenwu Pan, X Chen et al
Optical Materials Express. Vol. 7 (12), p. 4249-4257
Artikel i vetenskaplig tidskrift
2016

Structural and electronic properties of two-dimensional stanene and graphene heterostructure

L. Wu, P. F. Lu, Jingyun Bi et al
Nanoscale Research Letters. Vol. 11 (1, Artikel nr: 525)
Artikel i vetenskaplig tidskrift
2016

Dipole formation and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

W Pan, L Zhu, L Zhang et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Anomalous photoluminescence in InP1-xBix

XY Wu, XR Chen, WW Pan et al
19th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 4-9, 2016
Paper i proceeding
2016

InGaAsBi materials grown by gas source molecular beam epitaxy

L Ai, S Zhou, M Qi et al
19th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 4-9, 2016
Paper i proceeding
2016

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

W Pan, L Zhu, L Zhang et al
19th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 4-9, 2016
Paper i proceeding
2016

Influence of GaAsBi capping layer on morphology of InAs quantum dots

L Wang, W Pan, X Wu et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Highly tensile-strained Ge quantum dots on GaSb by MBE for light sources on Si

Z. P. Zhang, Y. X. Song, Q. M. Chen et al
2016 Ieee Photonics Society Summer Topical Meeting Series (Sum), p. 82-83
Paper i proceeding
2016

Negative thermal photoluminescence quenching of defect-related transitions in InP1-xBix

X Chen, X Wu, L Zhu et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Photoluminescence from tensile-strained Ge quantum dots

Q Chen, X Chen, Z. Zhang et al
The 2016 IEEE Summer Topical Meeting Series, SUM 2016, Newport Beach, USA, July 11th-13th, 2016, p. 120-121
Paper i proceeding
2016

Growth and material properties of InPBi thin films using gas source molecular beam epitaxy

W. W. Pan, P. Wang, X. Y. Wu et al
Journal of Alloys and Compounds. Vol. 656, p. 777-783
Artikel i vetenskaplig tidskrift
2016

MBE of tensile-strained Ge quantum dots for light sources on Si

ZP Zhang, YX Song, QM Chen et al
19th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 4-9, 2016
Paper i proceeding
2016

III-V light emitters on Ge and Si substrates

Shu Min Wang
International Union of Materials Research Societies – International Conference on Electronic Materials (IUMRS-ICEM2016), Singapore, July 4-8, 2016
Paper i proceeding
2016

Structural and electronic properties of two-dimensional hybrid stanene and graphene heterostructure

L Wu, P. F. Lu, D Liang et al
19th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 4-9, 2016
Paper i proceeding
2016

Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1-xBix dilute bismide alloys

L. Gelczuk, H. Stokowski, J. Kopaczek et al
Journal of Physics D: Applied Physics. Vol. 49 (11)
Artikel i vetenskaplig tidskrift
2016

Dilute III-PBi and III-SbBi for IR applications

Shu Min Wang
18th International Conference on Transparent Optical Networks, Trento, Italy, July 10-14, 2016
Paper i proceeding
2016

Anomalous photoluminescence in InP1-xBix

Xiaoyan Wu, X Chen, Wenwu Pan et al
Scientific Reports. Vol. 6, p. Art. no. 27867-
Artikel i vetenskaplig tidskrift
2016

THz Emission Studies on Semiconductor Alloy, InAsBi

A. J. Vickers, L F F Al-Ghuraibawi, A Boland-Thomas et al
International Workshop on Terahertz Science, Nanotechnologies and Applications
Paper i proceeding
2016

Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy

P. Wang, W. W. Pan, X. Y. Wu et al
Applied Physics Express. Vol. 9 (4)
Artikel i vetenskaplig tidskrift
2016

Influence of bismuth on morphology and optical property of InAs quantum dots

L Wang, W Pan, X Wu et al
6th International Conference on Nanostructures and Nanomaterials Self-Assembly (Nanosea2016)
Paper i proceeding
2016

The influence of non-uniform nano distribution of Bi atoms on the optical property of InPBi

L Zhang, X Wu, W Pan et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

P. Wang, W. W. Pan, X. Y. Wu et al
Nanoscale Research Letters. Vol. 11 (1)
Artikel i vetenskaplig tidskrift
2016

Effects of Bi Flux on the Properties of GaSbBi Films Grown by Molecular Beam Epitaxy

L Yue, XR Chen, YC Zhang et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Bi2Te3 Topological Insulator photodetector

J. J. Liu, Y Song, Y Li et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Epitaxial Growth and Physical Properties of Indium Phosphide Bismide

L Zhang, L Yue, W Pan et al
Kapitel i bok
2016

Tension-induced mechanical properties of stanene

L. L. Tao, C. H. Yang, L. Wu et al
Modern Physics Letters B. Vol. 30 (12), p. Art. no. 1650146-
Artikel i vetenskaplig tidskrift
2016

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

P. Wang, Q. M. Chen, X. Y. Wu et al
Nanoscale Research Letters. Vol. 11 (1), p. Article Number: 119-
Artikel i vetenskaplig tidskrift
2016

Scanning tunneling microscopy and spectroscopy characterization on GaSbBi grown by molecular beam epitaxy method

F Zha, Y Song, J Shao et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Growth and Material Properties of InyGa1−yAs1-xBix Thin Films using Gas Source Molecular Beam Epitaxy

S Zhou, M Qi, L Ai et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Characteristics of anomalous photoluminescence in InP1-xBix

X Wu, X Chen, W Pan et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Tuning the electronic and thermodynamic properties of Bi-doped InN alloys

D Liang, C Zhang, P. F. Lu et al
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Paper i proceeding
2016

Structural Properties and Phase Transition of Na Adsorption on Monolayer MoS2

H. He, P. F. Lu, L. Wu et al
Nanoscale Research Letters. Vol. 11 (1)
Artikel i vetenskaplig tidskrift
2016

Structural and optical properties of InGaAs/GaAsBi type II quantum well

L Yue, Y Song, X Chen et al
19th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 4-9, 2016
Paper i proceeding
2016

The effect of Bi-In hetero-antisite defects in In1-xPBix alloy

L. Wu, P. F. Lu, C. H. Yang et al
Journal of Alloys and Compounds. Vol. 674, p. 21-25
Artikel i vetenskaplig tidskrift
2016

Structural and Optical Properties of High Bi Content GaSbBi Films Grown by Molecular Beam Epitaxy

L Yue, Y Zhang, F Zhang et al
The 43rd International Symposium on Compound Semiconductors (ISCS), the 2016 Compound Semiconductor Week (CSW2016), p. 7528861-
Paper i proceeding
2016

Optical Properties of InGaAs/GaAsBi Type-II Quantum Wells

L Yue, L Zhang, W Pan et al
International Conference on Semiconductor Mid-IR Materials and Optics (SMMO) 2016, Lisbon, Portugal, March 21-24, 2016
Paper i proceeding
2016

High Transparency Al/Bi2Te3 Double Barrier Heterostructures

luca galletti, Sophie Charpentier, Yuxin Song et al
IEEE Transactions on Applied Superconductivity. Vol. 27 (4), p. Art. no. 1800404-
Paper i proceeding
2016

Nanoscale Distribution of Bismuth in InPBi

L Zhang, K Wang, X Wu et al
International Conference on Semiconductor Mid-IR Materials and Optics (SMMO) 2016, Lisbon, Portugal, March 21-24, 2016
Paper i proceeding
2016

Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

W. W. Pan, L. Y. Zhang, L. Zhu et al
Journal of Applied Physics. Vol. 120 (10)
Artikel i vetenskaplig tidskrift
2015

Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

K. Wang, P. Wang, W. W. Pan et al
Semiconductor Science and Technology. Vol. 30 (9)
Artikel i vetenskaplig tidskrift
2015

High quality InAs quantum dot lasers on germanium substrates

Shu Min Wang, Q. Gong, P. Wang et al
International Conference on Transparent Optical Networks. Vol. 2015-August
Paper i proceeding
2015

Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance

X Chen, Y. X. Song, L. Q. Zhu et al
Chinese Physics Letters. Vol. 32 (6)
Artikel i vetenskaplig tidskrift
2015

Novel InGaPBi single crystal grown by molecular beam epitaxy

L. Yue, P. Wang, K. Wang et al
Applied Physics Express. Vol. 8 (4), p. Art. no. 041201-
Artikel i vetenskaplig tidskrift
2015

Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

X. Y. Wu, K. Wang, W. W. Pan et al
Semiconductor Science and Technology. Vol. 30 (9)
Artikel i vetenskaplig tidskrift
2015

Novel Dilute Bismides for IR optoelectronics

Shu Min Wang
EMN The Collaborative Conference on Crystal Growth (3CG) 2015, Hong Kong, December 14-17, 2015
Paper i proceeding
2015

Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

P. Wang, W. W. Pan, K. Wang et al
AIP Advances. Vol. 5 (12), p. Art. no. 127104-
Artikel i vetenskaplig tidskrift
2015

Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

Jun Shao, Zhen Qi, Huan Zhao Ternehäll et al
Journal of Applied Physics. Vol. 118 (16), p. 165305-
Artikel i vetenskaplig tidskrift
2015

A new route toward light emission from Ge: tensile-strained quantum dots

Q. M. Chen, Y. X. Song, K. Wang et al
Nanoscale. Vol. 7 (19), p. 8725-8730
Artikel i vetenskaplig tidskrift
2015

Raman spectroscopy of epitaxial topological insulator Bi2Te3 thin films on GaN substrates

H. Xu, Y. X. Song, Q. Gong et al
Modern Physics Letters B. Vol. 29 (15)
Artikel i vetenskaplig tidskrift
2015

Cross-Sectional Scanning Tunneling Microscopy of Bi Atoms in InP

CM Krammel, K Wang, Y Gu et al
42nd International Symposium on Compound Semiconductors, Santa Barbara, USA, June 28-July 2, 2015
Paper i proceeding
2015

Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy

S. X. Zhou, M. Qi, L. K. Ai et al
Semiconductor Science and Technology. Vol. 30 (12), p. Art. no. 125001-
Artikel i vetenskaplig tidskrift
2015

Room temperature InAs quantum dot lasers on germanium substrates

Shu Min Wang
The 8th International Conference on Advanced Information Technology, Hangzhou, China October 25-17, 2015
Paper i proceeding
2015

Raman Spectroscopy of Bi4Te3 Thin Films Grown by MBE

H Xu, Y Song, W Pan et al
18th Euro MBE Workshop, Kanazei, Italy, March 15-18, 2015
Paper i proceeding
2015

Natural patterning of templates on GaAs by formation of cracks

Yuxin Song, H. Xu, Y. Li et al
AIP Advances. Vol. 5 (6), p. Art Nr 067146-
Artikel i vetenskaplig tidskrift
2015

Wavelength tuning of InAs quantum dot laser by micromirror device

J. Y. Yan, Q. Gong, C. Z. Kang et al
Journal of Crystal Growth. Vol. 425, p. 373-375
Artikel i vetenskaplig tidskrift
2015

Thermoelectric properties of SnSe compound

X. H. Guan, P. F. Lu, L. Wu et al
Journal of Alloys and Compounds. Vol. 643, p. 116-120
Artikel i vetenskaplig tidskrift
2015

Molecular Beam Epitaxy Growth and Characterization of InGaPBi Films

L Yue, P. Wang, K Wang et al
6th International Workshop on Bismuth Containing Semiconductors, Madison, USA, July 19th-22nd, 2015
Paper i proceeding
2015

Valence Band Anticrossing in InP1-xBix

L Wu, P. F. Lu, Shu Min Wang
6th International Workshop on Bismuth Containing Semiconductors, Madison, USA, July 19th-22nd, 2015
Paper i proceeding
2015

Continuous-wave operation of InAs quantum dot laser on Ge substrates grown by gas source molecular beam epitaxy

Q Gong, P. Wang, K Wang et al
18th Euro MBE Workshop, Kanazei, Italy, March 15-18, 2015
Paper i proceeding
2015

Hybrid functional investigations of the crystal structure, band gap energy, and elastic coefficients of GaAs1-xBix solid solutions

H. W. Cao, Z. Y. Yu, P. F. Lu et al
Computational Materials Science. Vol. 105, p. 6-10
Artikel i vetenskaplig tidskrift
2015

Recent progress on dilute bismides

Shu Min Wang
International Conference on Semiconductor Mid-IR Materials and Optics (SMMO) 2015, Prague, Czech Republic, April 8-11, 2015
Paper i proceeding
2015

Nanoscale Distribution of Bismuth in InPBi

L Zhang, W Pan, K Wang et al
6th International Workshop on Bismuth Containing Semiconductors, Madison, USA, July 19th-22nd, 2015
Paper i proceeding
2015

Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

H. Xu, Yuxin Song, W. W. Pan et al
AIP Advances. Vol. 5 (8)
Artikel i vetenskaplig tidskrift
2015

Growth and Characterization of InGaPBi Thin Films by Molecular Beam Epitaxy

L Yue, P. Wang, K Wang et al
18th Euro MBE Workshop, Kanazei, Italy, March 15-18, 2015
Paper i proceeding
2015

Valence band anticrossing in InP1-xBix

L. Wu, L. Han, X. Li et al
Asia Communications and Photonics Conference, ACPC 2015, Hong Kong, 19-23 November
Paper i proceeding
2015

Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes

W. W. Pan, J.A. Steele, P. Wang et al
Semiconductor Science and Technology. Vol. 30 (9)
Artikel i vetenskaplig tidskrift
2014

Phase transition of bismuth telluride thin films grown by MBE

Attila Fülöp, Yuxin Song, Sophie Charpentier et al
Applied Physics Express. Vol. 7 (4), p. Art. no. 045503-
Artikel i vetenskaplig tidskrift
2014

Electronic and magnetic properties of vanadium doped AlN nanosheet under in-plane biaxial strains

H. W. Cao, P. F. Lu, Z. Y. Yu et al
Superlattices and Microstructures. Vol. 73, p. 113-120
Artikel i vetenskaplig tidskrift
2014

Thermoelectric properties of quaternary (Bi,Sb)2(Te,Se)3 compound

P. F. Lu, Yiluan Li, Chengjie Wu et al
Journal of Alloys and Compounds. Vol. 584, p. 13-
Artikel i vetenskaplig tidskrift
2014

Structural and electronic properties of wurtzite GaX (X = N, P, As, Sb, Bi) under in-plain biaxial strains

H. W. Cao, P. F. Lu, X. L. Zhang et al
Superlattices and Microstructures. Vol. 67, p. 25-32
Artikel i vetenskaplig tidskrift
2014

Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

Yi Gu, K. Wang, H. Zhou et al
Nanoscale Research Letters. Vol. 9 (24)
Artikel i vetenskaplig tidskrift
2014

Bi2Te3 Thin Films Grown on Vicinal GaAs(111)B Substrates by MBE

Y. X. Song, Sophie Charpentier, H. Xu et al
5th International Workshop on Bismuth Containing Semiconductors
Paper i proceeding
2014

Natural Patterning of Templates on GaAs by Formation of Cracks

Y. X. Song, Y. Li, H. Xu et al
The 18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA, September 7-12, 2014
Paper i proceeding
2014

Vanadium doping on magnetic properties of H-passivated ZnO nanowires

P. F. Lu, X. L. Zhang, H. W. Cao et al
Journal of Materials Science. Vol. 49 (8), p. 3177-3182
Artikel i vetenskaplig tidskrift
2014

Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1-xBix dilute bismide with x <= 0.034

J. Kopaczek, R Kudrawiec, M. P. Polak et al
Applied Physics Letters. Vol. 105 (22)
Artikel i vetenskaplig tidskrift
2014

Evolution of Bi2Te3 on GaN Grown by MBE

Y. X. Song, Sophie Charpentier, H. Xu et al
The 18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA, September 7-12, 2014
Paper i proceeding
2014

First-principles study on electronic and magnetic properties of (Mn,Fe)-codoped ZnO

H. W. Cao, P. F. Lu, N. N. Cai et al
Journal of Magnetism and Magnetic Materials. Vol. 352, p. 66-71
Artikel i vetenskaplig tidskrift
2014

Point defect balance in epitaxial GaSb

N. Segercrantz, J. Slotte, I. Makkonen et al
Applied Physics Letters. Vol. 105 (8), p. art. no. 082113-
Artikel i vetenskaplig tidskrift
2014

Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates

K. Wang, Q. Gong, H. F. Zhou et al
Applied Surface Science. Vol. 291, p. 45-47
Artikel i vetenskaplig tidskrift
2014

Bi2Te3 Thin Films Grown by Molecular Beam Epitaxy (Invited talk)

Shu Min Wang, Y. X. Song
The 5th International Workshop on Bi-Containing Semiconductors, Cork, Ireland, July 20-23, 2014
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2014

Strain induced composition profile in InGaN/GaN core-shell nanowires

P. F. Lu, Chao Sun, H. W. Cao et al
Solid State Communications. Vol. 178, p. 1-
Artikel i vetenskaplig tidskrift
2014

Strain Analysis of Tensile-Strained Ge Quantum Dots Grown by MBE

Q. M. Chen, Y. X. Song, K. Wang et al
The 18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA, September 7-12, 2014
Paper i proceeding
2014

Structural and electronic properties of InPBi alloys

X. L. Zhang, P. F. Lu, L. H. Han et al
Modern Physics Letters B. Vol. 28 (17)
Artikel i vetenskaplig tidskrift
2014

Electronic and optical properties of InGaAs/GaAs quantum dots with tunable aspect-ratio

P. F. Lu, X. X. Zhong, C. Sun et al
Modern Physics Letters B. Vol. 28 (9)
Artikel i vetenskaplig tidskrift
2014

Raman Scattering of InP1-xBix Grown by Molecular Beam Epitaxy

W. W. Pan, K Wang, X. Y. Wu et al
5th International Workshop on Bismuth Containing Semiconductors
Paper i proceeding
2014

InPBi Single Crystals Grown by Molecular Beam Epitaxy

K. Wang, Yi Gu, H. F. Zhou et al
Scientific Reports. Vol. 4
Artikel i vetenskaplig tidskrift
2014

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

V. Lopes-Oliveira, L. K. S. Herval, V. O. Gordo et al
Journal of Applied Physics. Vol. 116 (23)
Artikel i vetenskaplig tidskrift
2014

Effect of buffer design on structural and electrical properties of InAs films grown on GaAs substrates

Huan Zhao Ternehäll, Shu Min Wang, Yuxin Song et al
the 41st international symposium on compound semiconductors, Montepillier, France
Paper i proceeding
2014

Raman Spectroscopy of Epitaxial Topological Insulator Bi2Te3 on GaN

H Xu, Y. X. Song, Q Gong et al
5th International Workshop on Bismuth Containing Semiconductors
Paper i proceeding
2014

Thermal Annealing on InP1-xBix Grown by Molecular Beam Epitaxy

X. Y. Wu, K Wang, W. W. Pan et al
5th International Workshop on Bismuth Containing Semiconductors
Paper i proceeding
2014

A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst

Shu Min Wang, Q. Gong, Y. Li et al
Scientific Reports. Vol. 4
Artikel i vetenskaplig tidskrift
2014

Wavelength Tuning of InAs Quantum Dot Laser by Micromirror Device

C. Z. Kang, Q. Gong, J. Y. Yan et al
The 18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA, September 7-12, 2014
Paper i proceeding
2014

InPBi for IR optoelectronic applications

K. Wang, Shu Min Wang
International Conference on Optoelectronic Technology and Application, Beijing, China, May 13-15, 2014
Paper i proceeding
2014

Semiconductor Compatible Synthesis of Nano-scale Graphene at Low Temperature

Liyao Zhang, Shu Min Wang, Qian Gong et al
The 41th International Symposium on Compound Semiconductor
Paper i proceeding
2014

Novel Dilute InPBi for IR Emitters

Shu Min Wang, K. Wang, Yi Gu et al
16th International Conference on Transparent Optical Networks, Graz, Austria, July 6-10, 2014, p. Article number 6876587-
Paper i proceeding
2014

Growth of dilute bismides by molecular beam epitaxy (Invited talk)

Shu Min Wang
The 18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA, September 7-12, 2014
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2014

Template-less Synthesis of Hollow Carbon Nanospheres for White Light-Emitting Diodes

X. G. Zheng, H. L. Wang, Q. Gong et al
Materials Letters. Vol. 126, p. 71-
Artikel i vetenskaplig tidskrift
2013

Strain induced composition profile in InGaN/GaN core-shell nanowires

P. F. Lu, Chao Sun, H. W. Cao et al
Solid State Communications. Vol. 178, p. 1-
Artikel i vetenskaplig tidskrift
2013

Record high mobility Bi2Te3 thin film grown by MBE

Yuxin Song, S. Charpentier, M. Ekström et al
The 17th European Workshop on Molecular Beam Epitaxy, Levi, Finland, 2013
Paper i proceeding
2013

Magnetic properties in (Mn,Fe)-codoped ZnO nanowire

H. W. Cao, P. F. Lu, Z. X. Cong et al
Thin Solid Films. Vol. 548, p. 480-484
Artikel i vetenskaplig tidskrift
2013

Investigation on structural, electronic and magnetic propeties of Mn doped Ga12N12 clusters

P. F. Lu, Chengjie Wu, Yiluan Li et al
Journal of Materials Science. Vol. 48 (24), p. 8552-
Artikel i vetenskaplig tidskrift
2013

Structural properties and energetics of GaAs nanowires

P. F. Lu, H. W. Cao, X. L. Zhang et al
Physica E: Low-Dimensional Systems and Nanostructures. Vol. 52, p. 34-39
Artikel i vetenskaplig tidskrift
2013

Bismuth alloying properties in GaAs nanowires

L. Ding, P. F. Lu, H. W. Cao et al
Journal of Solid State Chemistry. Vol. 205, p. 44-48
Artikel i vetenskaplig tidskrift
2013

Dilute Bismides for MIR applications

Shu Min Wang
International Conference on Seminconductor Mid-IR Materials and Optical, Warsaw, Poland, 2013
Paper i proceeding
2013

Growth optimization, strain compensation and structure design of InAs/GaSb type II superlattice for mid-wavelength infrared imaging

Yuxin Song, Shu Min Wang, Carl Asplund et al
Crystal Structure Theory and Application. Vol. 2, p. 46-
Artikel i vetenskaplig tidskrift
2013

A theoretical investigation on thermoelectric performance of ternary (Bi1-xSbx)(2)Te-3 compound

P. F. Lu, Chengjie Wu, Yiluan Li et al
Journal of Materials Science. Vol. 48 (14), p. 4999-5004
Artikel i vetenskaplig tidskrift
2013

Electronic structure and thermoelectric properties of Bi-2(Te1-xSex)(3) compound

L. Zhao, P. F. Lu, Z. Y. Yu et al
Solid State Communications. Vol. 155 (Feb.), p. 34-39
Artikel i vetenskaplig tidskrift
2013

Tensile strained Ge thin films grown on InGaP/GaAs metamorphic templates

K Wang, Q Gong, H.F Zhou et al
E-MRS Spring Meeting 2013, Strasbourg, France, 2013
Paper i proceeding
2013

Thermoelectric properties of quaternary BiSbTeSe compound

P. F. Lu, Yiluan Li, Chengjie Wu et al
Journal of Alloys and Compounds. Vol. 584, p. 13-18
Artikel i vetenskaplig tidskrift
2013

Growth of metamorphic InGaP layers on GaAs substrates

J. Y. Yan, Q. Gong, L. Yue et al
Journal of Crystal Growth. Vol. 378, p. 141-144
Artikel i vetenskaplig tidskrift
2013

Dilute bismides for near and mid-infrared applications

Yuxin Song, Yi Gu, Hong Ye et al
International Conference on Transparent Optical Networks
Paper i proceeding
2013

Dilute Bismide and its Optoelectronics Applications

Shu Min Wang
15th International Conference on Transparent Optical Networks, Cartagena, Spain
Paper i proceeding
2013

Chemical vapor deposition of graphene on liquid metal catalysts

G. Q. Ding, Y. Zhu, Shu Min Wang et al
Carbon. Vol. 53, p. 321-326
Artikel i vetenskaplig tidskrift
2013

InAs quantum dot lasers grown by gas source molecular beam epitaxy on Ge substrate

Q Gong, X.Q Gao, K Wang et al
30th North American Molecular Beam Epitaxy Conference, Banff, Canada, 2013
Paper i proceeding
2013

A novel semiconductor compatible path for graphene syntheis

Shu Min Wang, Qian Gong, Yaoyao Li et al
Topical Workshop on MBE-Grown Graphene, Berlin, Germany, 2013
Paper i proceeding
2013

Phase transition of MBE grown Bithmuth Telluride from Bi2T3 to Bi4Te3

A Fülöp, Yuxin Song, Peixiong Shi et al
30the North American Molecular Beam Epitaxy Conference, Banff, Canada, 2013
Paper i proceeding
2013

Defect studies in MBE grown GaSbBi layers

N Segercrantz, J Kujala, F Tuomisto et al
27th International Conference on Defects in Semiconductors 2013, Bologna, Italy, 2013
Paper i proceeding
2013

Molecular beam epitaxy growth of InSb1-xBix thin films

Yuxin Song, Shu Min Wang, Ivy Saha Roy et al
Journal of Crystal Growth. Vol. 378, p. 323-328
Artikel i vetenskaplig tidskrift
2013

High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE

Hong Ye, Mahdad Sadeghi, Yuxin Song et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 10 (5), p. 765-768
Paper i proceeding
2013

Defect studies in MBE grown GaSbBi layers

Natalie Segercrantz, Jiri Kujala, Filip Tuomisto et al
The 17th European Molecular Beam Epitaxy Workshop (EuroMBE), March 10th-13th, 2013, Levi, Finland
Paper i proceeding
2013

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

Yi Gu, Yonggang Zhang, Yuxin Song et al
Chinese Physics B. Vol. 22 (3), p. 037802-
Artikel i vetenskaplig tidskrift
2013

Optical properties of InGaAsBi/GaAs quantum wells and InAsBi layer on GaAs substrate

Y Gu, Y.G Zhang, Yuxin Song et al
4th International workshop on Bithmuth-Containing Semiconductors: Growth, Properties and Devices, Arkansas, USA, 2013
Paper i proceeding
2013

MBE of dilute-nitride optoelectronic devices

M. Guina, Shu Min Wang
Molecular Beam Epitaxy, p. 171-187
Kapitel i bok
2013

Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence

X Chen, Yuxin Song, Liang Zhu et al
Journal of Applied Physics. Vol. 113 (15), p. 153505-153507
Artikel i vetenskaplig tidskrift
2013

MBE growth of Bi2Te3 for Thermoelectrics

Yuxin Song, Sophie Charpentier, Attila Fülöp et al
Asia Communications and Photonics Conference, ACP
Paper i proceeding
2013

Dilute Bismides for Mid-IR Applications

Yuxin Song, Yi Gu, Jun Shao et al
Bismuth-Containing Compounds, p. 1-27
Kapitel i bok
2013

Novel Dilute Bismides for IR Optoelectronics Applications

Shu Min Wang, Yuxin Song, Kai Wang et al
Asia Communications and Photonics Conference, ACP
Paper i proceeding
2013

MBE synthesis of graphene using CBr4

J.Y Yan, Gong Q, Q.B Liu et al
The 17th European Workshop on Molecular Beam Epitaxy, Levi, Finland, 2013
Paper i proceeding
2013

New semiconductor alloy UbPBi grown by molecular beam epitaxy

K Wang, Y Gu, Q Gong et al
30th North American Molecular Beam Epitaxy Conference, Banff, Canada, 2013
Paper i proceeding
2012

Comparative Optical Studies of InGaAs/GaAs Quantum Wells Grown by MBE on (100) and (311)A GaAs Planes

A. Khatab, M. Shafi, R.H. Mari et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 9 (7), p. 1621-1623
Artikel i vetenskaplig tidskrift
2012

Growth of metamorphic InGaP layers on GaAs substrates

J. Y. Yan, Q. Gong, Q. B. Liu et al
The 17th International Conference on Molecular Beam Epitaxy, Nara, Japan, September 23-28, 2012
Paper i proceeding
2012

Polarization-Resolved Magneto-Photoluminescence of InGaAs(N)/GaAs Quantum Wells

L. K. S. Herval, V. Orsi Gordo, A. Khatab et al
International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN2012), Dresden, Germany July 22-27, 2012
Paper i proceeding
2012

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm

Hong Ye, Yuxin Song, Yi Gu et al
AIP Advances. Vol. 2 (4), p. 042158-
Artikel i vetenskaplig tidskrift
2012

Lattice Engineering Technology and Applications

Shu Min Wang
Samlingsverk (redaktörskap)
2012

Growth of GaSb1-xBix by molecular beam epitaxy

Yuxin Song, Shu Min Wang, Ivy Saha Roy et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 30 (2), p. Art. no. 02B114-
Artikel i vetenskaplig tidskrift
2012

Compliant Substrate

Shu Min Wang
Lattice Engineering Technology and Applications, p. 63-97
Kapitel i bok
2012

Light Emission from InGaAs/GaAs Quantum Wells at 1.3 µm Using Bi as Surfactant

Hong Ye, Yuxin Song, Yi Gu et al
E-MRS Spring Meeting 2012, Strasbourg, France, May 14-18, 2012
Paper i proceeding
2012

High quality strain-compensated multiple InAs/GaNAs quantum dot layers grown by MBE

Hong Ye, Yuxin Song, Mahdad Sadeghi et al
39th International Symposium on Compound Semiconductors (ISCS2012), Santa Barbara, CA, USA, August 27-30, 2012
Paper i proceeding
2012

Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates

A. Khatab, M. Henini, G. Patriarche et al
The 17th International Conference on Molecular Beam Epitaxy, Nara, Japan, September 23-28, 2012
Paper i proceeding
2012

Patterned Substrate Epitaxy

Huan Zhao Ternehäll, Shu Min Wang
Lattice Engineering Technology and Applications, p. 396-
Kapitel i bok
2012

Metamorphic Quantum Well Lasers

Yuxin Song, Shu Min Wang, Xiangjun Shang et al
Lattice Engineering: Technology and Applications, p. 283-317
Kapitel i bok
2011

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Thorvald Andersson, Kristian Berland, Rashid Farivar et al
ISPlasma 2011, March 6-9, 2011 Nagoya, Japan
Poster (konferens)
2011

Comparative Optical Studies of GaInAs/GaAs Quantum Wells Grown by MBE on Conventional and High Index GaAs Planes

A. Khatab, M. Shafi, R. H. Mari et al
16th Semiconducting and Insulating Materials Conference, Stockholm, Sweden, June 19-23, 2011
Paper i proceeding
2011

Growth Optimization for InAs/GaSb T2SL Structures by MBE

Yuxin Song, Shu Min Wang, C. Asplund et al
16th European Molecular Beam Epitaxy Workshop (Euro-MBE2011), Alpe d’Huez , France (2011)
Paper i proceeding
2011

Molecular Beam Epitaxy Growth of GaSbxBi1-x

Yuxin Song, Shu Min Wang, Ivy Saha Roy
28th North American Molecular Beam Epitaxy Conference (NAMBE2011), San Diego, USA (2011).
Paper i proceeding
2011

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Physica Status Solidi (B): Basic Research. Vol. 248 (5), p. 1207-1211
Artikel i vetenskaplig tidskrift
2011

Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE

Yuxin Song, Shu Min Wang, Cao Xiaohui et al
Journal of Crystal Growth. Vol. 323 (1), p. 21-25
Artikel i vetenskaplig tidskrift
2011

Bismuth incorporation and lattice contraction in GaSbBi and InSbBi

Shu Min Wang, Yuxin Song, Ivy Saha Roy
13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011
Paper i proceeding
2011

Contactless Electroreflectance, Photoluminescence and Time-Resolved Photoluminescence of GaInNAs Quantum Wells Obtained by the MBE Method with N-irradiation

M Baranowski, R Kudrawiec, M Syperek et al
Semiconductor Science and Technology. Vol. 26 (4), p. 045012-
Artikel i vetenskaplig tidskrift
2011

Molecular Beam Epitaxy Growth of InSbxBi1-x

Yuxin Song, Shu Min Wang
2nd International Workshop on Bismuth-Containing Semiconductors: Theory, Simulation and Experiment, Guildford, UK
Paper i proceeding
2011

Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures

Huan Zhao Ternehäll, Giuseppe Moschetti, Shu Min Wang et al
16th European MBE conference, France, p. 133-134
Paper i proceeding
2010

Metamorphic crystal growth

Shu Min Wang
Collaborative Conference on Crystal Growth (3CG), Miami, USA, November 29 – December 3, 2010 (invited)
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2010

Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers

Yuxin Song, Shu Min Wang, Zonghe Lai et al
Applied Physics Letters. Vol. 97 (9), p. 091903-
Artikel i vetenskaplig tidskrift
2010

Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE

Yuxin Song, Shu Min Wang, Zonghe Lai et al
16th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2010

Temperature stability of intersubband transitions in AlN/GaN quantum wells

Kristian Berland, Martin Stattin, Rashid Farivar et al
Applied Physics Letters. Vol. 97 (4), p. 043507-
Artikel i vetenskaplig tidskrift
2010

Anisotropic transport properties in InAs/AlSb heterostructures

Giuseppe Moschetti, Huan Zhao Ternehäll, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 97 (24), p. 3-
Artikel i vetenskaplig tidskrift
2010

1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
E-MRS Spring Meeting 2010, Strasbourg, France, June 7-10, 2010 (invited)
Paper i proceeding
2010

Dislocation-induced composition profile in alloy semiconductors

H. Ye, P. F. Lu, Z. Y. Yu et al
Solid State Communications. Vol. 150 (29-30), p. 1275-1278
Artikel i vetenskaplig tidskrift
2010

Comparative Study of Spacer Layers for InAs Quantum Dot Stacks

T. W. Reenaas, PE Vullum, Yuxin Song et al
Proceeding of Indium Phosphide and Related Materials 2010, Takamatsu, Japan, May 31-June 4 2010
Paper i proceeding
2009

Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

Yuxin Song, Shu Min Wang, Ivar Tångring et al
Journal of Applied Physics. Vol. 106 (12), p. 123531-
Artikel i vetenskaplig tidskrift
2009

Critical Thickness and Radius for Axial Heterostructure Nanowires Using Finite Element Method

Y. Han, P. F. Lu, Z. Y. Yu et al
Nano Letters. Vol. 9 (5), p. 1921-
Artikel i vetenskaplig tidskrift
2009

Metamorphic InGaAs telecom lasers on GaAs

Ivar Tångring, Yuxin Song, D.H. Wu et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. Proc. SPIE 7230, p. 723003-
Paper i proceeding
2009

Epitaxial optimization of 130 nm gate-length InGaAs/InAlAs/InP HEMTs for low-noise applications

Mikael Malmkvist, Shu Min Wang, Jan Grahn
IEEE Transactions on Electron Devices. Vol. 56 (1), p. 126-131
Artikel i vetenskaplig tidskrift
2009

Doping influence on structural property of linearly graded composition InGaAs buffer layer grown by MBE

Yuxin Song, Shu Min Wang, Ivar Tångring et al
15th European Molecular Beam Epitaxy Workshop, p. TuP11-
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2009

10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm

Mihail Dumitrescu, M. Wolf, K Schultz et al
2009 Conference on Optical Fiber Communication, OFC 2009; San Diego, CA; United States; 22 March 2009 through 26 March 2009
Paper i proceeding
2009

Reliability assessment and degradation analysis of 1.3 µm GaInNAs lasers

W Lu, S. Bull, Jun Lim et al
Journal of Applied Physics. Vol. 106 (9), p. 093110-
Artikel i vetenskaplig tidskrift
2009

Modeling of Heterostructure Nanowires and Dots

Shu Min Wang
The 9th Sweden-Japan Workshop on Quantum Nanophysics and Nanoelectronics (QNANO) Tokyo, Japan, November 13-14, 2009. (invited paper)
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2009

Independent determination of In and N concentrations in GaInNAs alloys

W Lu, Jun Lim, S. Bull et al
Semiconductor Science and Technology. Vol. 24 (10), p. 105016-
Artikel i vetenskaplig tidskrift
2009

Initial Capping and Stacking of Quantum Dots

Shu Min Wang
2009 Sino-Swedish Workshop on Nanophotonics, Stockholm, Sweden, July 29-30, 2009. (invited paper)
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2009

A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

Ivar Tångring, Yuxin Song, Zonghe Lai et al
Journal of Crystal Growth. Vol. 311, p. 1684-
Artikel i vetenskaplig tidskrift
2009

Material Studies for Quantum Dot Intermediate Band Solar Cells

S.F. Thomassen, T. W. Reenaas, B.O. Fimland et al
15th European Molecular Beam Epitaxy Workshop, Zakopane, Poland, March 8-11, 2009
Paper i proceeding
2009

Growth and Characterization of GaInNAs by Molecular Beam Epitaxy Using a Nitrogen Irradiation Method

Huan Zhao Ternehäll, Shu Min Wang, Qing Xiang Zhao et al
Journal of Crystal Growth. Vol. 311 (7), p. 1723-1727
Artikel i vetenskaplig tidskrift
2009

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Journal of Crystal Growth. Vol. 311, p. 1863-1867
Artikel i vetenskaplig tidskrift
2009

Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
IEEE Photonics Technology Letters. Vol. 21 (134), p. 134-136
Artikel i vetenskaplig tidskrift
2009

13 GHz Bandwidth of 1.31 μm GaInNAs Triple Quantum Well Lasers

Huan Zhao Ternehäll, Åsa Haglund, Shu Min Wang et al
The 15th European MBE Workshop, Zakopane, Poland
Paper i proceeding
2009

Metamorphic InGaAs Materials and Telecom Lasers

Shu Min Wang, Yuxin Song, Ivar Tangring et al
International Conference on Materials and Advanced Technology (ICMAT) 2009, Singapore, June 28 - July 3, 2009. (invited paper)
Paper i proceeding
2009

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Microelectronics Journal. Vol. 40, p. 386-391
Artikel i vetenskaplig tidskrift
2009

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 µm on GaAs Grown by Molecular Beam Epitaxy

H. L. Wang, D.H. Wu, B.P. Wu et al
Chinese Physics Letters. Vol. 26, p. 014214-
Artikel i vetenskaplig tidskrift
2009

A 1.31 μm GaInNAs Triple Quantum Well Laser with 13 GHz Small Signal Modulation Bandwidth

Huan Zhao Ternehäll, Åsa Haglund, Petter Westbergh et al
Electronics Letters. Vol. 45, p. 356-357
Artikel i vetenskaplig tidskrift
2008

Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers

R. MacKenzie, S. Bull, J.J. Lim et al
Physica Status Solidi C. Vol. 5 (2), p. 490-494
Artikel i vetenskaplig tidskrift
2008

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Workshop on Recent Advances in Low Dimensional Structures and Devices (WRA-LDSD)
Paper i proceeding
2008

Influence of Doping on Structural Properties of Graded InGaAs Layers Grown by MBE

Ivar Tångring, Yuxin Song, Shu Min Wang et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers

Huan Zhao Ternehäll, Göran Adolfsson, Shu Min Wang et al
Electronics Letters. Vol. 44 (7), p. 475-477
Artikel i vetenskaplig tidskrift
2008

Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs

Ivar Tångring, Shu Min Wang, Anders Larsson et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2008

Very Low Threshold Current Density 1.29 µm GaInNAs Triple Quantum Well Lasers Grown by MBE

Huan Zhao Ternehäll, Göran Adolfsson, Shu Min Wang et al
Electronics Letter. Vol. 44, p. 416-417
Artikel i vetenskaplig tidskrift
2008

High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6909, p. 690905-
Paper i proceeding
2008

Static and dynamic performance optimization of a 1.3 µm GaInNAs ridge waveguide laser

J.J. Lim, R. MacKenzie, S. Sujecki et al
2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08; Nottingham; United Kingdom; 1 September 2008 through 4 September 2008, p. 121-122
Paper i proceeding
2008

Static and dynamic performance optimisation of a 1.3 mu m GaInNAs ridge waveguide laser

Jun Lim, R. MacKenzie, S. Sujecki et al
Optical and Quantum Electronics. Vol. 40 (14-15), p. 1181-1186
Artikel i vetenskaplig tidskrift
2008

Photoluminescence microscopy investigation of lattice relaxation and defect formation processes in pseudomorphically strained InGaAsN multiple quantum wells

W Lu, S. Chao, A.V. Adrianov et al
Physica Status Solidi C. Vol. 5 (2), p. 467-472
Artikel i vetenskaplig tidskrift
2008

MBE Growth of a 1.58 µm InGaAs Quantum Well Lasers on GaAs

Ivar Tångring, Shu Min Wang, Anders Larsson
Indium Phosphide and Related Material Conference 2008
Paper i proceeding
2008

Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
21st IEEE International Semiconductor Laser Conference, ISLC 2008; Sorrento; Italy; 14 September 2008 through 18 September 2008, p. 55-56
Paper i proceeding
2008

Un-Cooled 10 Gb/s dilute-nitride optical transmitters for the 1300 nm wavelength range

M. Dumitrescu, M. Wolf, K Schultz et al
2008 International Semiconductor Conference, CAS 2008; Sinaia; Romania; 13 October 2008 through 15 October 2008. Vol. 1, p. 61-70
Paper i proceeding
2008

Growth and Characterization of GaInNAs Quantum Wells Using Nitrogen Irradiation in Molecular Beam Epitaxy

Huan Zhao Ternehäll, Shu Min Wang, Mahdad Sadeghi et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications

Mikael Malmkvist, Shu Min Wang, Jan Grahn
IEEE Transactions on Electron Devices. Vol. 55 (1), p. pp. 268-275
Artikel i vetenskaplig tidskrift
2008

Experimental Analysis of GaAs Based 1.3-1.6m Laser Materials

J. W. Ferguson, Peter Smowton, A.A. George et al
QEP-18 Conference
Paper i proceeding
2008

Low Threshold Current Density 1.3 µm Metamorphic InGaAs/GaAs Quantum Well Laser Diodes

D.H. Wu, Haili Wang, B.P. Wu et al
Electron. Lett.. Vol. 44, p. 474-
Artikel i vetenskaplig tidskrift
2008

Comparison of Optical and Structural Quality of GaIn(N)As Analog and Digital Quantum Wells Grown by Molecular Beam Epitaxy

Huan Zhao Ternehäll, Shu Min Wang, Qing Xiang Zhao et al
Semiconductor Science and Technology. Vol. 23 (12), p. Art nr. 125002-
Artikel i vetenskaplig tidskrift
2008

Evolution of Valence-Band Alignment with Nitrogen Content in GaNAs/GaAs Single Quantum Wells

J Shao, W Lu, Mahdad Sadeghi et al
Applied Physics Letters. Vol. 93 (3), p. Art. Nr. 031904-
Artikel i vetenskaplig tidskrift
2008

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
IEEE Journal of Quantum Electronics. Vol. 44 (7), p. 607-616
Artikel i vetenskaplig tidskrift
2007

Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 µm dilute nitride double quantum well lasers

R. MacKenzie, J.J. Lim, S. Bull et al
IET Optoelectronics. Vol. 1, p. 284-
Artikel i vetenskaplig tidskrift
2007

GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Ivar Tangring et al
MBE China 2007, Nanchang, China, October 2007 (invited)
Paper i proceeding
2007

Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers

R. MacKenzie, Jun Lim, S. Bull et al
EMRS Conference, Strasbourg, France, 2007
Paper i proceeding
2007

Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy

Ivar Tångring, Shu Min Wang, Zonghe Lai et al
Journal of Crystal Growth. Vol. 301 (SPEC. ISS.), p. 971-974
Artikel i vetenskaplig tidskrift
2007

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
Electronic Letters. Vol. 43 (8), p. 454-456
Artikel i vetenskaplig tidskrift
2007

Metamorphic InGaAs quanum wells for light emission at 1.3 – 1.6 µm

Shu Min Wang, Ivar Tangring, Qinfen Gu et al
Thin Solid Films. Vol. 515 (10), p. 4348-4351
Artikel i vetenskaplig tidskrift
2007

Optical properties of GaInNAs/GaAs quantum well structures

Qing Xiang Zhao, Magnus Willander, Shu Min Wang et al
Thin Solid Films. Vol. 515, p. 4423-
Artikel i vetenskaplig tidskrift
2007

Molecular beam epitaxial growth of highly strained long wavelength multiple quantum-well InGaAs/GaAs lasers with low threshold current density

Göran Adolfsson, Yongqiang Wei, Shu Min Wang et al
14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain
Poster (konferens)
2007

1.58 µm InGaAs quantum well laser on GaAs

Ivar Tångring, Shu Min Wang, Anders Larsson et al
Applied Physics Letters. Vol. 91, p. 221101-
Artikel i vetenskaplig tidskrift
2007

Thermal performance investigation of DQW GaInNAs laser diodes

Jun Lim, R. MacKenzie, S. Sujecki et al
NUSOD Conference, Newark, New Jersey, USA, Sept. 2007
Paper i proceeding
2007

Simulation of DQW GaInNAs laser diodes

J.J. Lim, R. MacKenzie, S. Sujecki et al
IET Optoelectronics. Vol. 1, p. 259-
Artikel i vetenskaplig tidskrift
2007

Electrical, optical and thermal simulation of DQW GaInNAs laser diodes

Jun Lim, R. MacKenzie, S. Sujecki et al
Semiconductor and Integrated Optoelectronics Conference, Cardiff, Wales, UK, April 2007
Paper i proceeding
2007

Measurement of the group index and linewidth enhancement factor in 1.3 µm dilute nitride double quantum well lasers

R. MacKenzie, Jun Lim, S. Bull et al
Semiconductor and Integrated Optoelectronics Conference, Cardiff, Wales, UK, April 2007
Paper i proceeding
2007

On the Temperature Dependence of the Threshold Current for GaInNAs/GaAs Quantum-Well Lasers

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
European Semiconductor Laser Workshop, Berlin, Germany.
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2007

Structural analysis of dilute nitride zincblend InGaNAs cluster by a semi-empirical quantum chemistry study

T.T. Han, Ying Fu, Shu Min Wang et al
Journal of Applied Physics. Vol. 101, p. 123707-
Artikel i vetenskaplig tidskrift
2007

Improvement of structural and optical quality of metamorphic InGaAs/InAlGaAs quantum wells by Be-doping

Ivar Tångring, Mahdad Sadeghi, Shu Min Wang et al
14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain, 2007.
Poster (konferens)
2007

Experimental analysis of increase open circuit voltage of a quantum dot intermediate band solar cell

S.F. Thomassen, T. Worren, B.O. Fimland et al
22nd European Photovoltaic Solar Energy Conference and Exhibition, Milan, Italy, September 2007
Paper i proceeding
2007

Thermal imaging and estimation of thermal performance of 1.3 µm InGaAsN/GaAs double quantum well laser diodes

R. MacKenzie, S. Bull, Jun Lim et al
European Semiconductor Laser Workshop, Berlin, Germany, Sept. 2007
Paper i proceeding
2007

Comparison of lattice relaxation processes in pseudomorphically strained InGaAsN/GaAs and InGaAs/GaAs multiple quantum wells

S. Chao, W Lu, S. Bull et al
Semiconductor and Integrated Optoelectronics Conference, Cardiff, Wales, UK, April 2007
Paper i proceeding
2007

Manipulation of strain relaxation in metamorphic heterostructures

Ivar Tångring, Zonghe Lai, Shu Min Wang et al
Applied Physics Letters. Vol. 90, p. 071904-
Artikel i vetenskaplig tidskrift
2007

State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Qing Xiang Zhao et al
the 14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain, 2007 (keynote invited talk)
Paper i proceeding
2007

Critical thickness of nano-scale lattice mismatched heterostructures

P.F. Lu, Shu Min Wang
19th International Conference on Indium Phosphide and Related Materials (IPRM’07), Matsue, Japan, May 14, 2007 (post-deadline)
Paper i proceeding
2006

The FAST ACCESS project: Low cost 1.3 µm sources for FAST ACCESS technologies

Eric Larkins, Jun Lim, Tom Foxon et al
Workshop on GaInNAs: Materials, devices, and technology
Paper i proceeding
2006

Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy

Qing Xiang Zhao, Shu Min Wang, Mahdad Sadeghi et al
Applied Physics Letters. Vol. 89 (3), p. 031907-
Artikel i vetenskaplig tidskrift
2006

Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers

Ying Fu, Yongqiang Wei, X. D. Wang et al
Journal of Applied Physics. Vol. 100 (7)
Artikel i vetenskaplig tidskrift
2006

From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs

Shu Min Wang, Qing Xiang Zhao, Yongqiang Wei et al
WOCSDICE 2006
Paper i proceeding
2006

Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs

Mikael Malmkvist, Malin Borg, Shu Min Wang et al
18th International Conference on Indium Phosphide and Related Materials, pp. 386-388, p. 329-331
Paper i proceeding
2006

Temperature Dependent of Gain and Recombination in Single and Double Quantum Well InGaAsN Structures Grown by MBE

Peter Smowton, J Thomson, A George et al
Workshop on GaInNAs: Materials, Devices, and Technology
Paper i proceeding
2006

High performance 1.3 mm GaInNAs Quantum Well Laser on GaAs

Yongqiang Wei, Shu Min Wang
GaInNAs Symposium-material and devices, Cardiff, England
Paper i proceeding
2006

10 Gb/s modulation of 1.3 µm GaInNAs lasers up to 110 degr.C

Johan Gustavsson, Yongqiang Wei, Mahdad Sadeghi et al
IEE Electronics Letters. Vol. 42 (16), p. 925-926
Artikel i vetenskaplig tidskrift
2005

6. Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al
APPLIED PHYSICS LETTERS. Vol. 87 (8), p. 081102-
Artikel i övriga tidskrifter
2005

Effects of growth temperature and post-growth thermal annealing on carrier localization and deep level emission in GaNAs/GaAs quantum well structures

Qing Xiang Zhao, Shu Min Wang, Wei Yongqiang et al
Applied Physics Letters. Vol. 86 (12), p. 121910-
Artikel i vetenskaplig tidskrift
2005

Effects of nitrogen incorporation on the properties of GaInNAs quantum well structures

Qing Xiang Zhao, Shu Min Wang, Mahdad Sadeghi et al
Journal of Applied Physics. Vol. 97 (7), p. 073714-
Artikel i vetenskaplig tidskrift
2005

Vertical scaling of gate-to-channel distance for a 70 nm InP pseudomorphic HEMT technology

Malin Borg, Jan Grahn, Shu Min Wang et al
Proceed. of Conf on InP and Related Materials (IPRM'05), p. 204-207
Paper i proceeding
2005

Strong 1.3-1.6 µm Light Emission from Metamorphic InGaAs Quantum Wells on GaAs

Shu Min Wang, Ivar Tångring, Qinfen Gu et al
3rd International Conference on Materials for Advanced Technologies
Paper i proceeding
2005

Red shift of the light emission from highly strained InGaAs/GaAs quantum wells by dipole delta-doping

Fu Ying, Shu Min Wang, Wang Xiaodong et al
Journal of Applied Physics. Vol. 98, p. 043501-
Artikel i vetenskaplig tidskrift
2005

Scaling of epitaxial layers in a 70 nm gate length InGaAs-InAlAs-InP HEMT technology

Malin Borg, Shu Min Wang, Jan Grahn
Proceed. GigaHertz 2005 Conference, p. 155-158
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Yongqiang Wei, Shu Min Wang, Xiaodong Wang et al
JOURNAL OF CRYSTAL GROWTH. Vol. 278, p. 747-
Artikel i övriga tidskrifter
2005

2. High performance 1.28 mm GaInNAs Double Quantum Well lasers

Yongqiang Wei, Mahdad Sadeghi, Shu Min Wang et al
ELECTRONICS LETTERS. Vol. 41 (24), p. 1328-
Artikel i övriga tidskrifter
2005

High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm

Shu Min Wang, Qinfen Gu, Yongqiang Wei et al
Applied Physics Letters. Vol. 87, p. 141913-
Artikel i vetenskaplig tidskrift
2005

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

Jan Grahn, Piotr Starski, Mikael Malmkvist et al
Proceed. of Conf on InP and Related Materials (IPRM'05), p. 124-128
Paper i proceeding
2005

High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers

Yongqiang Wei, Anders Larsson, Johan Gustavsson et al
14th European Semiconductor Laser Workshop,Glasgow, UK
Paper i proceeding
2005

Very low threshold current density of 1.3 µm GaInNAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy

Shu Min Wang, Yongqiang Wei, Xiaodong Wang et al
Journal of Crystal Growth. Vol. 278, p. 734-
Artikel i vetenskaplig tidskrift
2005

Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al
CLEO-/EUROPE-EQEC 2005, Muchen, Germany
Paper i proceeding
2005

Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization

Qing Xiang Zhao, Magnus Willander, Shu Min Wang et al
Physics Letters, Section A: General, Atomic and Solid State Physics. Vol. 341 (1-4), p. 297-
Artikel i vetenskaplig tidskrift
2005

Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber

Hans Lindberg, Martin Strassner, Mahdad Sadeghi et al
Optics Letters. Vol. 30 (20), p. 2793-2795
Artikel i vetenskaplig tidskrift
2005

Optical properties of GaInNAs/GaAs quantum well structures

Zhao Qingxiang, Willander Magnus, Shu Min Wang et al
3rd International Conference on Materials for Advanced Technologies, Singapore
Paper i proceeding
2004

1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping

Shu Min Wang, Qing Xiang Zhao, Xia Dong Wang et al
IPRM04, Kagoshima, Japan, May 31 - June 4, 2004
Paper i proceeding
2004

Long wavelenght InGaAs/GaAs quantum well lasers grown by molecular beam epitaxy

Yongqiang Wei, Shu Min Wang, Xia Dong Wang et al
13th International Conference on Molecular Beam Epitaxy, Edinburgh, UK, August 22-27, 2004
Paper i proceeding
2004

Very low threshold current density of 1.3 um GaInNAs single quantum well lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Xia Dong Wang et al
13th International Conference on Molecular Beam Epitaxy, Edinburgh, UK, August 22-27, 2004
Paper i proceeding
2004

Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping

Xiao Dong Wang, Shu Min Wang, Yongqiang Wei et al
IPRM04, Kagoshime, Japan, May 31 - June 4, 2004
Paper i proceeding
2004

High-quality 1.3 um GalnNAs single quantum well lasers grown by MBE

Shu Min Wang, S.M Wang, Yongqiang Wei et al
Electronics Letter. Vol. 40, p. 1338-
Artikel i vetenskaplig tidskrift
2004

1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells

Shu Min Wang, Qing Xiang Zhao, Yongqiang Wei et al
Applied Physics Letter. Vol. 85, p. 875-
Artikel i vetenskaplig tidskrift
2003

Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
Journal of Crystal Growth. Vol. 251 (1-4), p. 145-9
Artikel i vetenskaplig tidskrift
2002

Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
International Conference on Molecular Beam Epitaxy, 2002, p. 285-6
Paper i proceeding
2002

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
Applied Physics Letters. Vol. 81 (7), p. 1195-7
Artikel i vetenskaplig tidskrift
2001

Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence

Fariba Ferdos, Mahdad Sadeghi, Qing Xiang Zhao et al
Journal of Crystal Growth. Vol. 227-228, p. 1140-5
Artikel i vetenskaplig tidskrift
1993

Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate

Niklas Rorsman, Christer Karlsson, Herbert Zirath et al
23rd European Solid State Device Research Conference, ESSDERC 1993, p. 765-768
Paper i proceeding

Spara referenser

Om du har installerat Zotero eller Mendeley på din dator kan du direkt ta ut referenser från de publikationer du ser i listan.

Du laddar ner dessa pluginer här:
Zotero
Mendeley

Det finns inga projekt att visa.
Det kan finnas fler projekt där Shu Min Wang medverkar, men du måste vara inloggad som anställd på Chalmers för att kunna se dem.