Effects of substrate temperature on the uniformity of InGaAs epilayers using a dual-zone manipulator
Artikel i vetenskaplig tidskrift, 2021

Three-inch InGaAs epilayers are grown by solid source molecular beam epitaxy using the manipulator equipped with dual-zone heaters. The effects of the substrate temperature on the uniformity of material surface morphology, indium composition, photoluminescence, electronic mobility, and background doping are investigated. As the temperature of the outer heater in the range of 625 °C to 655 °C, no dim area is observed on the edge of the material surface. At the same time, the indium composition fluctuation of the high-resolution X-ray diffraction and the photoluminescence wavelength fluctuation are less than ±0.1% for the epilayers grown at the optimum substrate temperatures.

Photoluminescence

Solid source molecular beam epitaxy

High-resolution X-ray diffraction

Uniformity

Mobility

Semiconducting III-V arsenide

Författare

Hongzhen Wang

Chinese Academy of Sciences

Shalu Zhu

Chinese Academy of Sciences

Liuyan Fan

Chinese Academy of Sciences

Yi Gu

Chinese Academy of Sciences

Pingping Chen

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Jiasheng Cao

Chinese Academy of Sciences

Bo Yang

Chinese Academy of Sciences

Tao Li

Chinese Academy of Sciences

Xiumei Shao

Chinese Academy of Sciences

Xue Li

Chinese Academy of Sciences

Haimei Gong

Chinese Academy of Sciences

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 574 126330

Ämneskategorier

Oorganisk kemi

Keramteknik

Materialkemi

DOI

10.1016/j.jcrysgro.2021.126330

Mer information

Senast uppdaterat

2021-09-20