Wavelength extension in GaSbBi quantum wells using delta-doping
Artikel i vetenskaplig tidskrift, 2018
Delta doped GaSbBi quantum wells (QWs) grown by molecular beam epitaxy was investigated to extend light emission wavelength at room temperature with the Bi content of 7.0%. The delta-doped GaSbBi QWs transition energy shifts up to 47.0 meV with increasing the Te dopant concentration from 0 to 4.56 × 10 12 cm −2 , resulting in maximum light emission of 2.42 μm, without obvious degradation of optical quality. The temperature coefficient of the band-gap for the delta-doped QW is only 0.099 meV/K compared with 0.265 meV/K from the undoped GaSbBi reference QW.
GaSbBi
Molecular beam epitaxy
Delta-doping
Photoluminescence
Författare
Yanchao Zhang
ShanghaiTech University
Chinese Academy of Sciences
L. Yue
Chinese Academy of Sciences
X Chen
Chinese Academy of Sciences
Jun Shao
Chinese Academy of Sciences
Xin Ou
Chinese Academy of Sciences
Shu Min Wang
Chinese Academy of Sciences
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Journal of Alloys and Compounds
0925-8388 (ISSN)
Vol. 744 667-671Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Den kondenserade materiens fysik
DOI
10.1016/j.jallcom.2018.02.027