Wavelength extension in GaSbBi quantum wells using delta-doping
Artikel i vetenskaplig tidskrift, 2018

Delta doped GaSbBi quantum wells (QWs) grown by molecular beam epitaxy was investigated to extend light emission wavelength at room temperature with the Bi content of 7.0%. The delta-doped GaSbBi QWs transition energy shifts up to 47.0 meV with increasing the Te dopant concentration from 0 to 4.56 × 10 12 cm −2 , resulting in maximum light emission of 2.42 μm, without obvious degradation of optical quality. The temperature coefficient of the band-gap for the delta-doped QW is only 0.099 meV/K compared with 0.265 meV/K from the undoped GaSbBi reference QW.


Molecular beam epitaxy




Yanchao Zhang

ShanghaiTech University

Chinese Academy of Sciences

L. Yue

Chinese Academy of Sciences

X Chen

Chinese Academy of Sciences

Jun Shao

Chinese Academy of Sciences

Xin Ou

Chinese Academy of Sciences

Shu Min Wang

Chinese Academy of Sciences

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Journal of Alloys and Compounds

0925-8388 (ISSN)

Vol. 744 667-671


Atom- och molekylfysik och optik

Annan fysik

Den kondenserade materiens fysik



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