Molecular beam epitaxy growth of GaSb1-xBix without rotation
Artikel i vetenskaplig tidskrift, 2019

GaSb1-xBix thin film was grown on a 2 inch GaSb substrate by molecular beam epitaxy (MBE) without substrate rotation. Bi composition is found to vary from 2.76% to 3.98% across the wafer. The distribution of Bi content is mainly determined by spatial non-uniformity of Sb/Ga flux ratio, while Bi flux has slightly influence. Ostwald ripening process is confirmed to be reason for bigger Bi droplets via Bi surface diffusion. With the increase of Sb/Ga flux ratio, Ostwald ripening process is suppressed. At high Bi flux, excess Ga atoms accumulate on surface and form droplets.

Bi incorporation

Sb/Ga flux ratio

Bi flux

Stationary growth

GaSbBi

Molecular beam epitaxy

Författare

Chaodan Chi

Chinese Academy of Sciences

L. Yue

Chinese Academy of Sciences

Yanchao Zhang

Semiconductor Materials Co., Ltd

ShanghaiTech University

Z. Zhang

ShanghaiTech University

Chinese Academy of Sciences

Xin Ou

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Chinese Academy of Sciences

Vacuum

0042-207X (ISSN)

Vol. 168 108819

Ämneskategorier

Oorganisk kemi

Polymerteknologi

Materialkemi

DOI

10.1016/j.vacuum.2019.108819

Mer information

Senast uppdaterat

2019-12-02