Bi2Te3 photoconductive detectors on Si
Artikel i vetenskaplig tidskrift, 2017

The peculiar properties of the gapless surface states with a Dirac cone shaped energy dispersion in topological insulators (TIs) enable promising applications in photodetection with an ultra-broad band and polarization sensitivity. Since many TIs can be easily grown on silicon (Si) substrates, TIs on Si could make an alternative route for photon detection of Si photonics. We present good device performances of a Si-based single-crystal bismuth telluride (Bi2Te3) photoconductive detector. Room temperature photo responses to 1064 nm and 1550 nm light illumination were demonstrated. Linear dependences of the photocurrent on both the incident light power and the bias voltage were observed. The main device parameters including responsivity and quantum efficiency were extracted. Published by AIP Publishing.

Topological Insulator Film

SB2TE3

Silicon

Temperature

BI2SE3

Thin-Films

High

Ultrafast Graphene Photodetector

Responsivity

Författare

J. J. Liu

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. X. Song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. J. Ma

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Q. M. Chen

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Z. Y. S. Zhu

Chinese Academy of Sciences

ShanghaiTech University

P. F. Lu

BUTP

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 110 141109

Ämneskategorier

Nanoteknik

DOI

10.1063/1.4979839