Si-based InGaAs photodetectors on heterogeneous integrated substrate
Artikel i vetenskaplig tidskrift, 2021
In this paper, InGaAs p-i-n photodetectors (PDs) on an InP/SiO2/Si (InPOI) substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate. The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate. The photo responsivities of both devices measured at 1.55 µm are comparable, which are about 0.808–0.828 A W−1. Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K, the peak detectivities of both PDs are comparable. In general, the overall performance of the InPOI-based PD is comparable to the InP-based PD, demonstrating that the ion-slicing technology is a promising route to enable the high-quality Si-based InP platform for the full photonic integration on a Si substrate.
InPOI
molecular beam epitaxy
72.80.Ey
73.40.Kp
InGaAs photodetector
71.20.Nr
72.40.+w
monolithic integration
42.82.−m
Författare
Chaodan Chi
Chinese Academy of Sciences
Jiajie Lin
China Nanhu Academy of Electronics and Information Technology
Chinese Academy of Sciences
Xingyou Chen
Chinese Academy of Sciences
Chengli Wang
Chinese Academy of Sciences
Ziping Li
Chinese Academy of Sciences
Liping Zhang
Chinese Academy of Sciences
Zhanglong Fu
Chinese Academy of Sciences
Xiaomeng Zhao
Chinese Academy of Sciences
HUA LI
Chinese Academy of Sciences
Tiangui You
Chinese Academy of Sciences
L. Yue
Chinese Academy of Sciences
Jiaxiang Zhang
Chinese Academy of Sciences
Niefeng Sun
China Nanhu Academy of Electronics and Information Technology
China Electronic Technology Group Corporation
Peng Gao
Tianjin Institute of Power Sources
R Kudrawiec
Politechnika Wrocławska
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Xin Ou
Chinese Academy of Sciences
Science China: Physics, Mechanics and Astronomy
1674-7348 (ISSN) 18691927 (eISSN)
Vol. 64 6 267311Ämneskategorier
Övrig annan teknik
Biomedicinsk laboratorievetenskap/teknologi
Annan elektroteknik och elektronik
DOI
10.1007/s11433-020-1673-1