High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs
Paper i proceeding, 2008

We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm 2 per quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1 mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C has been demonstrated.

GaInNAs

molecular beam epitaxy

1.3 μm

quantum well laser

10 Gb/s

3 dB bandwidth

Författare

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Göran Adolfsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yongqiang Wei

University of Cambridge

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN)

Vol. 6909 690905- 690905

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1117/12.766357

ISBN

9780819470843