Göran Adolfsson

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE

2011

Realization of spectrally engineered semiconductor Fabry-Perot lasers with narrow geometrical tolerances

Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators

Spectral engineering of semiconductor Fabry–Perot laser cavities in the weakly and strongly perturbed regimes

1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs

10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

Static and dynamic performance optimization of a 1.3 µm GaInNAs ridge waveguide laser

High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Thermal performance investigation of DQW GaInNAs laser diodes

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Very Low Threshold Current Density 1.29 µm GaInNAs Triple Quantum Well Lasers Grown by MBE

Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy

Threshold and Temperature Characteristics of InGa(N)As-GaAs Multiple Quantum Well Lasers

Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)

Static and dynamic performance optimisation of a 1.3 mu m GaInNAs ridge waveguide laser

Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers

Molecular beam epitaxial growth of highly strained long wavelength multiple quantum-well InGaAs/GaAs lasers with low threshold current density

On the Temperature Dependence of the Threshold Current for GaInNAs/GaAs Quantum-Well Lasers

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy

Suppression of Phase Error in Differential Phase-Shift Keying Data by Amplitude Regeneration