Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers
Artikel i vetenskaplig tidskrift, 2009

We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.

InGaNAs

Characteristic temperature

Semiconductor lasers

Lateral carrier diffusion

Scanning near-field optical microscopy (SNOM)

Författare

Göran Adolfsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Jörgen Bengtsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Jun Lim

University of Nottingham

Ville Vilokkinen

Modulight, Inc.

P. Melanen

Modulight, Inc.

IEEE Photonics Technology Letters

1041-1135 (ISSN)

Vol. 21 134-136

Ämneskategorier

Telekommunikation

Elektroteknik och elektronik

DOI

10.1109/LPT.2008.2009128