Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers

Journal article, 2009

We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.