Göran Adolfsson

Showing 25 publications

2011

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Physica Status Solidi (B): Basic Research. Vol. 248 (5), p. 1207-1211
Journal article
2011

Realization of spectrally engineered semiconductor Fabry-Perot lasers with narrow geometrical tolerances

Göran Adolfsson, Jörgen Bengtsson, Åsa Haglund et al
Journal of Applied Physics. Vol. 109 (9), p. 093112-
Journal article
2010

Spectral engineering of semiconductor Fabry–Perot laser cavities in the weakly and strongly perturbed regimes

Göran Adolfsson, Jörgen Bengtsson, Anders Larsson
Journal of the Optical Society of America B: Optical Physics. Vol. 27 (1), p. 118-127
Journal article
2010

1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
E-MRS Spring Meeting 2010, Strasbourg, France, June 7-10, 2010 (invited)
Paper in proceeding
2009

10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm

Mihail Dumitrescu, M. Wolf, K Schultz et al
2009 Conference on Optical Fiber Communication, OFC 2009; San Diego, CA; United States; 22 March 2009 through 26 March 2009
Paper in proceeding
2009

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Microelectronics Journal. Vol. 40, p. 386-391
Journal article
2009

Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
IEEE Photonics Technology Letters. Vol. 21 (134), p. 134-136
Journal article
2009

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Journal of Crystal Growth. Vol. 311, p. 1863-1867
Journal article
2008

Static and dynamic performance optimization of a 1.3 µm GaInNAs ridge waveguide laser

J.J. Lim, R. MacKenzie, S. Sujecki et al
2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08; Nottingham; United Kingdom; 1 September 2008 through 4 September 2008, p. 121-122
Paper in proceeding
2008

High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6909, p. 690905-
Paper in proceeding
2008

Thermal performance investigation of DQW GaInNAs laser diodes

J.J. Lim, R. MacKenzie, S. Sujecki et al
Optical and Quantum Electronics. Vol. 40 (5-6), p. 385-390
Journal article
2008

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
15th International Conference on Molecular Beam Epitaxy
Paper in proceeding
2008

Very Low Threshold Current Density 1.29 µm GaInNAs Triple Quantum Well Lasers Grown by MBE

Huan Zhao Ternehäll, Göran Adolfsson, Shu Min Wang et al
Electronics Letter. Vol. 44, p. 416-417
Journal article
2008

Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
21st IEEE International Semiconductor Laser Conference, ISLC 2008; Sorrento; Italy; 14 September 2008 through 18 September 2008, p. 55-56
Paper in proceeding
2008

Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Workshop on Recent Advances in Low Dimensional Structures and Devices (WRA-LDSD)
Paper in proceeding
2008

Static and dynamic performance optimisation of a 1.3 mu m GaInNAs ridge waveguide laser

Jun Lim, R. MacKenzie, S. Sujecki et al
Optical and Quantum Electronics. Vol. 40 (14-15), p. 1181-1186
Journal article
2008

Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers

Huan Zhao Ternehäll, Göran Adolfsson, Shu Min Wang et al
Electronics Letters. Vol. 44 (7), p. 475-477
Journal article
2008

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
IEEE Journal of Quantum Electronics. Vol. 44 (7), p. 607-616
Journal article
2007

Molecular beam epitaxial growth of highly strained long wavelength multiple quantum-well InGaAs/GaAs lasers with low threshold current density

Göran Adolfsson, Yongqiang Wei, Shu Min Wang et al
14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain
Conference poster
2007

On the Temperature Dependence of the Threshold Current for GaInNAs/GaAs Quantum-Well Lasers

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
European Semiconductor Laser Workshop, Berlin, Germany.
Other conference contribution
2007

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Göran Adolfsson, Shu Min Wang, Mahdad Sadeghi et al
Electronic Letters. Vol. 43 (8), p. 454-456
Journal article
2007

GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Ivar Tangring et al
MBE China 2007, Nanchang, China, October 2007 (invited)
Paper in proceeding
2006

Suppression of Phase Error in Differential Phase-Shift Keying Data by Amplitude Regeneration

Pontus Johannisson, Göran Adolfsson, Magnus Karlsson
Optics Letters. Vol. 31 (10), p. 1385-1387
Journal article

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