Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy
Paper in proceedings, 2008

Scanning near-field optical microscopy measurements of the lateral spontaneous emission profile for narrow ridge waveguide 1.3 um GaInNAs-GaAs lasers reveal significant lateral carrier diffusion, which can explain the high characteristic temperature of the threshold current.

SNOM

semiconductor lasers

InGaNAs

characteristic temperature

lateral carrier diffusion

Author

Göran Adolfsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Jörgen Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jun Lim

University of Nottingham

Ville Vilokkinen

Modulight, Inc.

P. Melanen

Modulight, Inc.

21st IEEE International Semiconductor Laser Conference, ISLC 2008; Sorrento; Italy; 14 September 2008 through 18 September 2008

0899-9406 (ISSN)

55-56

Subject Categories

Telecommunications

DOI

10.1109/ISLC.2008.4636006

ISBN

978-142441783-4

More information

Latest update

2/28/2018