Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy
Paper in proceeding, 2008
Scanning near-field optical microscopy measurements of the lateral spontaneous emission profile for narrow ridge waveguide 1.3 um GaInNAs-GaAs lasers reveal significant lateral carrier diffusion, which can explain the high characteristic temperature of the threshold current.
SNOM
semiconductor lasers
InGaNAs
characteristic temperature
lateral carrier diffusion
Author
Göran Adolfsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Jörgen Bengtsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Jun Lim
University of Nottingham
Ville Vilokkinen
Modulight, Inc.
P. Melanen
Modulight, Inc.
21st IEEE International Semiconductor Laser Conference, ISLC 2008; Sorrento; Italy; 14 September 2008 through 18 September 2008
0899-9406 (ISSN)
55-56978-142441783-4 (ISBN)
Subject Categories
Telecommunications
DOI
10.1109/ISLC.2008.4636006
ISBN
978-142441783-4