High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy
Journal article, 2007
High-quality 1.2 µm InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epitaxy are demonstrated. For the triple quantum well, a record low threshold current density of 107 A/cm2/well is achieved for a 100 x 1000 µm laser.
Author
Göran Adolfsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Electronic Letters
Vol. 43 8 454-456
Subject Categories
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